Method for producing interconnect structures for integrated circuits
First Claim
1. A method for producing a semiconductor device, comprising:
- providing a semiconductor substrate, the semiconductor comprising one or more active components on a surface of the semiconductor substrate;
depositing a top layer of dielectric material on the surface of the substrate or on a dielectric layer present on the surface of the semiconductor substrate;
depositing a common chemical mechanical polishing stopping layer on the top layer;
etching one or more first openings through at least the top layer, filling the one or more first openings with a first conductive material, and performing a first chemical mechanical polishing to form first conductive structures, wherein the common chemical mechanical polishing stopping layer stops the first chemical mechanical polishing;
etching one or more second openings through at least the top layer, filling the one or more second openings with a second conductive material, and performing a second chemical mechanical polishing to form second conductive structures, wherein the common chemical mechanical polishing stopping layer stops the second chemical mechanical polishing.
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Abstract
The present disclosure is related to method for producing a semiconductor device comprising the steps of: providing a semiconductor substrate (1), comprising active components on the surface of said substrate, depositing a top layer (2) of dielectric material on the surface of said substrate or on other dielectric layers present on said surface, etching at least one first opening (7) at least through said top layer, filling said opening(s) at least with a first conductive material (8), and performing a first CMP step, to form said first conductive structures (3,26), etching at least one second opening (13) at least through said top layer, filling said opening(s) at least with a second conductive material (10), and performing a second CMP step, to form said second conductive structures (4,24), wherein the method comprises the step of depositing a common CMP stopping layer (5,25) on said dielectric top layer, before the steps of etching and filling said first opening(s), so that said same CMP stopping layer is used for stopping the CMP process after filling of the first opening(s) as well as the CMP process after filling of the second opening(s). The disclosure is equally related to devices obtainable by the method of the disclosure.
397 Citations
9 Claims
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1. A method for producing a semiconductor device, comprising:
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providing a semiconductor substrate, the semiconductor comprising one or more active components on a surface of the semiconductor substrate; depositing a top layer of dielectric material on the surface of the substrate or on a dielectric layer present on the surface of the semiconductor substrate; depositing a common chemical mechanical polishing stopping layer on the top layer; etching one or more first openings through at least the top layer, filling the one or more first openings with a first conductive material, and performing a first chemical mechanical polishing to form first conductive structures, wherein the common chemical mechanical polishing stopping layer stops the first chemical mechanical polishing; etching one or more second openings through at least the top layer, filling the one or more second openings with a second conductive material, and performing a second chemical mechanical polishing to form second conductive structures, wherein the common chemical mechanical polishing stopping layer stops the second chemical mechanical polishing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification