Semiconductor device, display device, and electronic appliance

• US 8,253,135 B2
• Filed: 03/18/2010
• Issued: 08/28/2012
• Est. Priority Date: 03/27/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uochi, Hideki, Kawae, Daisuke
• Primary Examiner(s): Pizarro, Marcos D.
• Assistant Examiner(s): Jahan, Bilkis
• Application Number:
  US12/726,370
• Publication Number:
  US 20100244021A1
• Time in Patent Office: 894 Days
• Field of Search: 257/43, 257/72, 257/59, 257/309, 257/350, 257/532, 257/76, 257/E29.296
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Claims

1. A semiconductor device comprising:

a terminal electrode;

a wiring electrically connected to the terminal electrode;

an oxide semiconductor layer overlapping with the terminal electrode in a plane view;

an insulating layer provided between the terminal electrode and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

2. The semiconductor device according to claim 1, wherein power supply voltage is applied to the oxide semiconductor layer.

3. The semiconductor device according to claim 1, wherein the functional circuit comprises a semiconductor element comprising an oxide semiconductor.

4. A semiconductor device comprising:

a terminal electrode;

a wiring electrically connected to the terminal electrode;

an oxide semiconductor layer overlapping with the wiring in a plane view;

an insulating layer provided between the wiring and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

5. The semiconductor device according to claim 4, wherein power supply voltage is applied to the oxide semiconductor layer.

6. The semiconductor device according to claim 4, wherein the functional circuit comprises a semiconductor element comprising an oxide semiconductor.

7. A semiconductor device comprising:

a terminal electrode;

a first wiring;

a second wiring electrically connected to the terminal electrode;

an oxide semiconductor layer which is electrically connected to the second wiring and which overlaps with the first wiring in a plane view;

an insulating layer provided between the first wiring and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the second wiring and in which operation is controlled in accordance with the signal inputted.

8. The semiconductor device according to claim 7, wherein power supply voltage is applied to the first wiring.

9. The semiconductor device according to claim 7, wherein the functional circuit comprises a semiconductor element comprising an oxide semiconductor.

10. A semiconductor device comprising:

an oxide semiconductor layer;

an insulating layer over the oxide semiconductor layer;

a terminal electrode over the insulating layer;

a wiring electrically connected to the terminal electrode through a contact hole provided in the insulating layer; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

11. The semiconductor device according to claim 10, wherein power supply voltage is applied to the oxide semiconductor layer.

12. The semiconductor device according to claim 10, wherein the functional circuit comprises a semiconductor element comprising an oxide semiconductor.

13. A semiconductor device comprising:

a wiring;

an insulating layer over the wiring;

an oxide semiconductor layer over the insulating layer;

a terminal electrode electrically connected to the wiring through a contact hole provided in the insulating layer; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

14. The semiconductor device according to claim 13, wherein power supply voltage is applied to the oxide semiconductor layer.

15. The semiconductor device according to claim 13, wherein the functional circuit comprises a semiconductor element comprising an oxide semiconductor.