III-nitride light-emitting devices with reflective engineered growth templates and methods of manufacture
First Claim
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1. A light emitter comprising:
- a crystalline III-nitride layer;
a first mirror having a first major face that is epitaxially coupled to a first major face of the crystalline III-nitride layer and includes a metal;
a second mirror;
an active region epitaxially coupled to a second major face of the first mirror that is opposite the first major face of the first mirror such that the first mirror, the active region, and the second mirror form a resonant-cavity light-emitting diode (RC-LED),wherein the crystalline III-nitride layer and the first mirror have lattice constants that are substantially equal to one another.
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Abstract
A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
46 Citations
20 Claims
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1. A light emitter comprising:
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a crystalline III-nitride layer; a first mirror having a first major face that is epitaxially coupled to a first major face of the crystalline III-nitride layer and includes a metal; a second mirror; an active region epitaxially coupled to a second major face of the first mirror that is opposite the first major face of the first mirror such that the first mirror, the active region, and the second mirror form a resonant-cavity light-emitting diode (RC-LED), wherein the crystalline III-nitride layer and the first mirror have lattice constants that are substantially equal to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A light emitting device comprising:
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a substrate; a first III-nitride layer in contact with the substrate, wherein the first III-nitride layer has a first conductivity type and a first bandgap energy; a planar specular epitaxial first metal-mirror layer in contact with the first III-nitride layer; a second III-nitride layer in contact with the planar specular epitaxial first metal mirror layer, wherein the second III-nitride layer has a second conductivity type and a second bandgap energy; a light-emitting layer in contact with the second III-nitride layer; a third III-nitride layer in contact with the light-emitting layer, wherein the third III-nitride layer has a third conductivity type and a third bandgap energy; a fourth III-nitride layer in contact with the third III-nitride layer, wherein the fourth III-nitride layer has a fourth conductivity type and a fourth bandgap energy; and a second metal-mirror layer in contact with the fourth III-nitride layer, wherein the first III-nitride layer and the first metal mirror layer have lattice constants that are substantially equal to one another. - View Dependent Claims (15, 16, 17, 18)
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19. A light emitting device comprising:
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a substrate; a first III-nitride layer in contact with the substrate, wherein the first III-nitride layer has a first conductivity type and a first bandgap energy; a planar specular epitaxial metal mirror layer in contact with the first III-nitride layer; a second III-nitride layer in contact with the planar specular epitaxial metal mirror layer, wherein the second III-nitride layer has a second conductivity type and a second bandgap energy; a light-emitting layer in contact with the second III-nitride layer; a third III-nitride layer in contact with at least a portion of the light-emitting layer, wherein the third III-nitride layer has a third conductivity type and a third bandgap energy; a fourth III-nitride layer in contact with the third III-nitride layer, wherein the fourth III-nitride layer has a fourth conductivity type and a fourth bandgap energy; and a transparent contact layer in contact with the fourth III-nitride layer, wherein the first III-nitride layer and the metal mirror layer have lattice constants that are substantially equal to one another. - View Dependent Claims (20)
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Specification