MOS device with varying trench depth
First Claim
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1. A semiconductor device comprising:
- a drain region comprising an epitaxial layer;
a body disposed in the epitaxial layer;
a source embedded in the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source, the active region contact trench having a first depth associated with a first region that is in proximity to a bottom portion of the body and a second depth associated with a second region that is in proximity to a bottom portion of the source, the first depth being substantially different from the second depth; and
an active region contact electrode disposed within the active region contact trench; and
a Schottky barrier controlling layer formed in the first region in the active region contact trench;
wherein;
the first depth extends from an oxide layer to the first region; and
the second depth extends from an oxide layer to the second region.
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Abstract
A semiconductor device includes a drain region comprising an epitaxial layer, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, and an active region contact electrode disposed within the active region contact trench. The active region contact trench has a first width associated with a first region that is in proximity to a bottom portion of the body and a second width associated with a second region that is in proximity to a bottom portion of the source. The first width is substantially different from the second width.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a first depth associated with a first region that is in proximity to a bottom portion of the body and a second depth associated with a second region that is in proximity to a bottom portion of the source, the first depth being substantially different from the second depth; and an active region contact electrode disposed within the active region contact trench; and a Schottky barrier controlling layer formed in the first region in the active region contact trench;
wherein;the first depth extends from an oxide layer to the first region; and the second depth extends from an oxide layer to the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification