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MOS device with varying trench depth

  • US 8,253,192 B2
  • Filed: 04/15/2011
  • Issued: 08/28/2012
  • Est. Priority Date: 02/11/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a drain region comprising an epitaxial layer;

    a body disposed in the epitaxial layer;

    a source embedded in the body;

    a gate trench extending into the epitaxial layer;

    a gate disposed in the gate trench;

    an active region contact trench extending through the source, the active region contact trench having a first depth associated with a first region that is in proximity to a bottom portion of the body and a second depth associated with a second region that is in proximity to a bottom portion of the source, the first depth being substantially different from the second depth; and

    an active region contact electrode disposed within the active region contact trench; and

    a Schottky barrier controlling layer formed in the first region in the active region contact trench;

    wherein;

    the first depth extends from an oxide layer to the first region; and

    the second depth extends from an oxide layer to the second region.

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