Cap member and semiconductor device employing same

• US 8,253,240 B2
• Filed: 11/24/2008
• Issued: 08/28/2012
• Est. Priority Date: 11/29/2007
• Status: Active Grant

• Current Assignee: Sharp Fukuyama Laser Co., Ltd. (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ishida, Masaya, Hanaoka, Daisuke, Horiguchi, Takeshi
• Primary Examiner(s): Le, Thao
• Assistant Examiner(s): Ida, Geoffrey
• Application Number:
  US12/292,672
• Publication Number:
  US 20090140416A1
• Time in Patent Office: 1,373 Days
• Field of Search: 257/704, 313/498, 362/800
• US Class Current: 257/704
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/02257 using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Abstract

A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

Claims

1. A semiconductor device, comprising:

a semiconductor chip;

a support base on which the semiconductor chip is mounted; and

a cap member fixed on the support base so as to cover the semiconductor chip, the cap member including,

a cylindrical side wall portion,

a top face portion closing one end of the side wall portion and having an opening formed in a predetermined region therein,

a light-transmissive window member fitted to the top face portion so as to stop the opening, and

a fitting portion arranged at another end of the side wall portion and fixed on a support base on which a semiconductor chip is mounted,

wherein at least one of the side wall portion and the top face portion has grooves formed in both of inner and outer surfaces thereof, the grooves forming a part, less thick than another part, of the at least one of the side wall portion and the top face portion.

2. The semiconductor device according to claim 1, wherein

the top face portion has a first step portion formed in at least part of a rim portion of the opening, and

the first step portion forms, in the top face portion, a part less thick than the other part of the at least one of the side wall portion and the top face portion.

3. The semiconductor device according to claim 2, wherein

the opening in the top face portion is formed circular as seen in a plan view, and

the first step portion is formed all around the rim portion of the opening.

4. The semiconductor device according to claim 1, wherein the grooves are formed in the top face portion.

5. The semiconductor device according to claim 4, wherein the grooves are formed circumferentially so as to surround the opening as seen in a plan view.

6. The semiconductor device according to claim 1, wherein

a second step portion is formed in a predetermined region in the side wall portion, and

the second step portion forms, in the side wall portion, a part less thick than the other part of the at least one of the side wall portion and the top face portion.

7. The semiconductor device according to claim 6, wherein the second step portion is formed so as to make one turn in a circumferential direction of the side wall portion.

8. The semiconductor device according to claim 6, wherein the second step portion is formed at two or more places in the side wall portion.

9. The semiconductor device according to claim 1, wherein the grooves are formed in the side wall portion.

10. The semiconductor device according to claim 9, wherein the grooves formed so as to make one turn in a circumferential direction of the side wall portion.

11. The semiconductor device according to claim 1, wherein

the fitting portion is formed at the other end of the side wall portion integrally therewith, and has a projecting portion formed thereon, the projecting portion projecting toward the support base and pressed onto a upper face of the support base,

the fitting portion is bent outward of the cylindrical side wall portion with a predetermined radius of curvature so that the fitting portion includes a flat-surfaced portion, and

the projecting portion is formed on the flat-surfaced portion.

12. The semiconductor device according to claim 11, wherein the projecting portion is formed on the fitting portion, in an end portion thereof opposite from the side wall portion.

13. The semiconductor device according to claim 1, wherein as a result of the cap member being fixed on the support base, the semiconductor chip is airtightly sealed in the cap member.

14. The semiconductor device according to claim 1, wherein the semiconductor chip is a nitride-based semiconductor laser chip.

15. The semiconductor device according to claim 1, wherein the support base is substantially circular as seen in a plan view, and

the support base has a diameter of 3.8 mm or less.