Micromechanical pressure sensing device

• US 8,256,301 B2
• Filed: 02/17/2010
• Issued: 09/04/2012
• Est. Priority Date: 01/31/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Jakobsen, Henrik
• Primary Examiner(s): Caputo, Lisa
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US12/707,135
• Publication Number:
  US 20100139410A1
• Time in Patent Office: 930 Days
• Field of Search: None
• US Class Current: 73/721
• CPC Class Codes: B01D 65/10 Testing of membranes or membrane apparatus; Detecting or repairing leaks
• CPC Class Codes: B01D 65/102 Detection of leaks in membranes
• CPC Class Codes: G01L 19/0076 using buried connections
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0064 the element and the diaphragm being in intimate contact

Abstract

A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Claims

1. A micromechanical pressure sensing device, comprising:

a semiconductor support structure including a support;

at least one diaphragm attached to and supported by the support; and

at least one piezoresistive sensing device buried in the support, the piezoresistive sensing device being arranged to sense a strain induced in the semiconductor support structure, the strain being inducible by a fluid in contact with the at least one diaphragm, to determine a pressure acting on the at least one diaphragm.

2. The device according to claim 1, wherein the piezoresistive sensing device comprises a piezoresistive Wheatstone bridge.

3. The device according to claim 1, wherein the support is one of plurality of supports and the at least one diaphragm comprises a plurality of diaphragms arranged in an array, each of the diaphragms being separated from each of its adjacent diaphragms by one of the plurality of supports.

4. The device according to claim 1, wherein the diaphragm is semi-permeable.

5. The device according to claim 1, wherein the diaphragm is arranged to act as filter.

6. The device according to claim 1, wherein the semiconductor support structure comprises at least one of:

single-crystal silicon, poly-silicon, and silicon nitride.

7. The device according to claim 1, further comprising:

a first cavity for receiving a first fluid that contacts one surface of the at least one diaphragm; and

a second cavity for receiving a reference fluid that contacts an opposing surface of the at least one diaphragm, the piezoresistive sensing device being arranged to sense the strain induced in the semiconductor support structure by the first fluid.

8. The device according to claim 1, wherein the piezoresistive sensing device is further arranged to determine the osmotic pressure of the fluid.

9. A method of manufacturing a micromechanical pressure sensing device, the method comprising:

structuring a semiconductor substrate to form a semiconductor support structure;

burying at least one piezoresistive sensing device in the semiconductor support structure; and

attaching at least one diaphragm to the semiconductor support structure such that the at least one diaphragm is supported by the semiconductor support structure, the piezoresistive sensing device being arranged in the semiconductor support structure to sense a strain induced in the semiconductor support structure, the strain being inducible by a fluid in contact with the at least one diaphragm, to determine a pressure acting on the at least one diaphragm.

10. The method according to claim 9, wherein structuring the semiconductor substrate includes etching the semiconductor substrate.

11. The method according to claim 9, wherein burying the at least one piezoresistive sensing device includes:

defining conductors in the semiconductor substrate via ion implantation; and

growing an epitaxial layer over the conductors.

12. The method according to claim 11, further comprising:

forming a passivation layer over the epitaxial layer.

13. The method according to claim 9, wherein the diaphragm is formed by selectively etching the semiconductor substrate.

14. The method according to claim 9, further comprising:

anodically bonding a glass member or a semiconductor member to a top surface formed on the semiconductor substrate.

15. The method according to claim 9, wherein the piezoresistive sensing device is formed as a piezoresistive Wheatstone bridge.

16. The method according to claim 9, wherein the semiconductor support structure is formed to include a plurality of supports and the at least one diaphragm comprises a plurality of diaphragms arranged in an array, each of the diaphragms being separated from each of its adjacent diaphragms by one of the plurality of supports.

17. The method according to claim 9, further comprising:

forming a first cavity for receiving a first fluid that contacts one surface of the at least one diaphragm; and

forming a second cavity for receiving a reference fluid that contacts an opposing surface of the at least one diaphragm, the piezoresistive sensing device being arranged to sense the strain induced in the semiconductor support structure by the first fluid.

18. A method of operating a micromechanical pressure sensing device, the method comprising:

inducing a strain in a semiconductor support structure supporting at least one diaphragm, by contacting the at least one diaphragm with a fluid; and

sensing the strain induced in the semiconductor support structure with at least one piezoresistive sensing device buried in the semiconductor support structure, to determine a pressure acting on the at least one diaphragm.

19. The method according to claim 18, wherein the semiconductor support structure comprises a plurality of supports, the at least one piezoresistive sensing device comprises a plurality of Wheatstone bridges buried in the supports, and the at least one diaphragm comprises a plurality of diaphragms arranged in an array, each of the diaphragms being separated from each of its adjacent diaphragms by one of the plurality of supports, and wherein:

inducing the strain comprises contacting the plurality of diaphragms with the fluid; and

sensing the strain comprises sensing the strain with the plurality of Wheatstone bridges.

20. The method according to claim 18, wherein:

inducing the strain comprises;

receiving a first fluid into a first cavity such that the first fluid contacts one surface of the at least one diaphragm; and

receiving a reference fluid into a second cavity such that the reference fluid contacts an opposing surface of the at least one diaphragm; and

sensing the strain comprises sensing the strain induced in the semiconductor support structure by the first fluid.