Method of process optimization for dual tone development

• US 8,257,911 B2
• Filed: 08/26/2008
• Issued: 09/04/2012
• Est. Priority Date: 08/26/2008
• Status: Active Grant

• Current Assignee: Interuniversitair Micro-Electronica Centrum VZW (IMEC International), Katholieke Universiteit Leuven, Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Gronheid, Roel, Bernard, Sophie, Fonseca, Carlos A., Somervell, Mark, Scheer, Steven
• Primary Examiner(s): Kelly, Cynthia
• Assistant Examiner(s): SULLIVAN, CALEEN O
• Application Number:
  US12/198,853
• Publication Number:
  US 20100055625A1
• Time in Patent Office: 1,470 Days
• Field of Search: 430/325, 430/326, 430/322, 430/331, 430/330, 430/22, 430/30
• US Class Current: 430/325
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/325 Non-aqueous compositions
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence

Abstract

A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process.

Claims

1. A method of controlling a double patterning process, comprising:

performing a dual-tone development process that includes;

exposing a layer of radiation-sensitive material to a pattern of radiation,

performing a positive-tone development process to remove a first radiation-sensitive material portion characterized by a positive-tone critical dimension, and

performing a negative-tone development process to remove a second radiation-sensitive material portion characterized by a negative-tone critical dimension; and

optimizing said dual-tone development process to achieve a target difference between a target positive-tone critical dimension and a target negative-tone critical dimension by;

acquiring one or more positive-tone characteristics, said one or more positive-tone characteristics relate said positive-tone critical dimension to a control parameter for a first set of process parameters;

acquiring one or more negative-tone characteristics, said one or more negative-tone characteristics relate said negative-tone critical dimension to said control parameter for a second set of process parameters, wherein said control parameter is common to both said first and second sets of process parameters, and variations in said control parameter effect change in both said positive-tone critical dimension and said negative-tone critical dimension;

selecting a target positive-tone characteristic from the one or more positive-tone characteristics that approximately intersects the target positive-tone critical dimension at a target value for said control parameter to within a first deviation;

selecting a target negative-tone characteristic from the one or more negative-tone characteristics that approximately intersects the target negative-tone critical dimension at the target value for said control parameter to within a second deviation; and

establishing a process recipe for said performing said dual-tone development process using said target positive-tone characteristic, said target negative-tone characteristic, and said target value for said control parameter.

2. The method of claim 1, wherein said layer of radiation-sensitive material comprises a photo-resist.

3. The method of claim 1, wherein said layer of radiation-sensitive material comprises a 248 nm photo-resist, a 193 nm photo-resist, a 157 nm photo-resist, or an extreme ultraviolet photo-resist, or a combination of two or more thereof.

4. The method of claim 1, wherein said layer of radiation-sensitive material comprises a positive-tone photo-resist.

5. The method of claim 1, wherein said layer of radiation-sensitive material comprises a dual-tone photo-resist.

6. The method of claim 1, wherein said layer of radiation-sensitive material comprises a photo-resist that switches solubility due to a change in polarity upon said exposing to said pattern of radiation and said optionally elevating said temperature of said substrate following said exposure.

7. The method of claim 1, wherein said layer of radiation-sensitive material comprises a photo-resist that provides acid-catalyzed deprotection upon said exposing to said pattern of radiation and said optionally elevating said temperature of said substrate following said exposure.

8. The method of claim 1, wherein said positive-tone development process is performed prior to said negative-tone development process.

9. The method of claim 1, wherein said negative-tone development process is performed prior to said positive-tone development process.

10. The method of claim 1, wherein said positive-tone development process comprises utilizing a base solution, and said negative-tone development process comprises utilizing an organic solvent.

11. The method of claim 1, further comprising:

performing a first post-exposure bake by elevating a temperature of said substrate to a first post-exposure temperature following said exposing and preceding said performing said positive-tone development process.

12. The method of claim 11, further comprising:

performing a second post-exposure bake by elevating a temperature of said substrate to a second post-exposure temperature following said exposing and preceding said performing said negative-tone development process.

13. The method of claim 1, further comprising:

performing a first post-exposure bake by elevating a temperature of said substrate to a first post-exposure temperature following said exposing and preceding said performing said positive-tone development process; and

performing a second post-exposure bake by elevating a temperature of said substrate to a second post-exposure temperature following said exposing and preceding said performing said negative-tone development process.

14. The method of claim 13, wherein said control parameter comprises an exposure dose.

15. The method of claim 14, wherein said first set of process parameters comprises a first post-exposure temperature for said first post-exposure bake, a time said substrate is elevated to said first post-exposure temperature, a heating rate for achieving said first post-exposure temperature, a cooling rate for reducing said first post-exposure temperature, a pressure of a gaseous environment surrounding said substrate during said elevation of said substrate to said first post-exposure temperature, a composition of a gaseous environment surrounding said substrate during said elevation of said substrate to said first post-exposure temperature, a composition of a first chemistry used during said positive-tone development process, a time duration for applying said first chemistry, or a temperature of said first chemistry, or a combination of two or more thereof.

16. The method of claim 15, wherein said acquiring said one or more positive-tone characteristics comprises varying one or more process parameters in said first set of process parameters.

17. The method of claim 15, wherein said acquiring said one or more positive-tone characteristics comprises varying said composition of said first chemistry used during said positive-tone development process.

18. The method of claim 15, wherein said acquiring said one or more negative-tone characteristics comprises varying one or more process parameters in said second set of process parameters.

19. The method of claim 15, wherein said acquiring said one or more negative-tone characteristics comprises varying said second post-exposure temperature for said second post-exposure bake, or said time said substrate is elevated to said second post-exposure temperature, or both.

20. The method of claim 14, wherein said second set of process parameters comprises a second post-exposure temperature for said second post-exposure bake, a time said substrate is elevated to said second post-exposure temperature, a heating rate for achieving said second post-exposure temperature, a cooling rate for reducing said second post-exposure temperature, a pressure of a gaseous environment surrounding said substrate during said elevation of said substrate to said second post-exposure temperature, a composition of a gaseous environment surrounding said substrate during said elevation of said substrate to said second post-exposure temperature, a composition of a second chemistry used during said negative-tone development process, a time duration for applying said second chemistry, or a temperature of said second chemistry, or a combination of two or more thereof.