Gallium nitride-based compound semiconductor light-emitting device
First Claim
1. A gallium nitride-based compound semiconductor light-emitting device comprising a substrate;
- an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate;
a positive electrode which is provided so as to contact the p-type semiconductor layer; and
a negative electrode which is provided so as to contact the n-type semiconductor layer, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical,wherein a density of protruding portions (particulates) of the roughened surface is from 1×
105 pieces/mm2 to 1×
108 pieces/mm2.
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Accused Products
Abstract
A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.
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Citations
17 Claims
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1. A gallium nitride-based compound semiconductor light-emitting device comprising a substrate;
- an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate;
a positive electrode which is provided so as to contact the p-type semiconductor layer; and
a negative electrode which is provided so as to contact the n-type semiconductor layer, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical,wherein a density of protruding portions (particulates) of the roughened surface is from 1×
105 pieces/mm2 to 1×
108 pieces/mm2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 16, 17)
- an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate;
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12. A method for manufacturing a gallium nitride-based compound semiconductor light-emitting device, comprising the following steps (1) to (4) of:
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(1) stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer which are formed of a gallium nitride-based compound semiconductor, in this order on a substrate; (2) forming a positive electrode having openings on the p-type semiconductor layer; (3) forming a mask formed of metal microparticles on the p-type semiconductor layer corresponding to the openings; and (4) performing dry etching onto the gallium nitride-based compound semiconductor from above the mask so that at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical, wherein a density of protruding portions (particulates) of the roughened surface is from 1×
105 pieces/mm2 to 1×
108 pieces/mm2. - View Dependent Claims (13, 14, 15)
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Specification