Electronics package with an integrated circuit device having post wafer fabrication integrated passive components

• US 8,258,599 B2
• Filed: 07/11/2006
• Issued: 09/04/2012
• Est. Priority Date: 12/15/2005
• Status: Active Grant

• Current Assignee: Atmel Corporation (Microchip Technology Incorporated)
• Original Assignee: Atmel Corporation (Microchip Technology Incorporated)
• Inventors: Lam, Ken M.
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US11/456,685
• Publication Number:
  US 20070138572A1
• Time in Patent Office: 2,247 Days
• Field of Search: 257/531, 257/532, 257/536, 257/724, 438/107, 438/109, 438/110, 438/329, 438/382, 438/957
• US Class Current: 257/531
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/29007 Layer connector smaller than the underlying bonding area
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19103 : interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

An apparatus and a method for producing passive components on an integrated circuit device. The integrtated circuit device has post wafer fabrication integrated passive components situated on the opposite substrate side of the device'"'"'s integrated circuitry. Electrical contact pads of the passive components are configured to be coupled to the electronics package contact pads to complete the electronic package.

Claims

1. An integrated circuit comprising:

a substrate including a front side and a back side, the front side of the substrate including one or more integrated circuit devices thereon;

a dielectric material formed over the back side of the substrate;

at least one inductor on the back side of the substrate, the at least one inductor including a metal deposition layer forming a metal structure, the at least one inductor terminating at two bond pads at either end of the inductor; and

a metal seed layer between the dielectric material and the metal structure.

2. The integrated circuit of claim 1, wherein the metal structure includes copper.

3. The integrated circuit of claim 1, wherein the dielectric material is a high-k dielectric material.

4. The integrated circuit of claim 3, wherein the dielectric material includes zirconium.

5. The integrated circuit of claim 1, wherein the metal seed layer includes titanium-tungsten.

6. The integrated circuit of claim 1, wherein both of the bond pads are a same distance from the back side of the substrate.

7. The integrated circuit of claim 1, wherein the at least one inductor includes a high-Q inductor.

8. The integrated circuit of claim 1, wherein the at least one inductor includes various combinations of inductors with various sizes.