Power device package and semiconductor package mold for fabricating the same

• US 8,258,622 B2
• Filed: 01/29/2008
• Issued: 09/04/2012
• Est. Priority Date: 02/28/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Korea Semiconductor Limited (ON Semiconductor Corporation)
• Inventors: Lee, Keun-hyuk, Lim, Seung-won, Park, Sung-min
• Primary Examiner(s): Arroyo, Teresa M
• Application Number:
  US12/011,844
• Publication Number:
  US 20080203559A1
• Time in Patent Office: 1,680 Days
• Field of Search: 257/687, 257/712, 257/718, 257/787, 257/E23.128, 257/706, 257/726, 257/727, 257/E23.084
• US Class Current: 257/727
• CPC Class Codes: H01L 2023/405 heatsink to package
• CPC Class Codes: H01L 2023/4087 Mounting accessories, interposers, clamping or screwing parts
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/13034 Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/207 Diameter ranges

Abstract

Provided are a power device package coupled to a heat sink using a bolt and a semiconductor package mold for fabricating the same. The power device package includes: a substrate; at least one power device mounted on the substrate; a mold member sealing the substrate and the power device; and at least one bushing member fixed to the mold member to provide a through hole for a bolt member for coupling a heat sink to the mold member.

Claims

1. A power device package comprising:

a substrate;

at least one power device mounted on the substrate;

a mold member sealing the substrate and the power device, the mold member having an upper surface and a lower surface;

a heat sink coupled to the substrate;

at least one bolt member configured to fix the mold member to the heat sink; and

at least one bushing member fixed to the mold member to provide a through hole penetrating the mold member,

wherein the at least one bushing member protrudes from both the upper surface and the lower surface of the mold member,

and wherein the bolt member is inserted into the through hole for coupling the heat sink to the mold member.

2. The power device package of claim 1, wherein the substrate comprises a surface exposed outside the mold member, and the heat sink is coupled to the exposed surface of the substrate.

3. The power device package of claim 1, wherein the substrate and the power device are entirely sealed by the mold member.

4. The power device package of claim 1, wherein the substrate is a lead frame.

5. The power device package of claim 1, wherein the substrate is an insulating substrate comprising a first surface on which a conductive pattern electrically connected with the power device is formed.

6. The power device package of claim 5, wherein the insulating substrate is a ceramic substrate.

7. The power device package of claim 5, wherein the substrate comprises:

a second surface opposite to the first surface; and

a base metal layer formed on the second surface to contact the heat sink.

8. The power device package of claim 7, wherein the base metal layer is formed of one selected from the group consisting of aluminum, an aluminum alloy, copper, and a copper alloy.

9. The power device package of claim 1, further comprising at least one control device for controlling the power device mounted on the substrate.

10. The power device package of claim 1, wherein the bushing member is formed of one selected from the group consisting of aluminum, an aluminum alloy, copper, and a copper alloy.

11. The power device package of claim 1, wherein the mold member comprises a recess portion receiving a head portion of the bolt member.

12. The power device package of claim 1, wherein the bushing member comprises a receiving part comprising an inner circumference surface defining the through hole and an outer circumference surface contacting the mold member.

13. The power device package of claim 12, wherein the bushing member further comprises a first protruding part providing a first surface contacting a head portion of the bolt member at a first end of the receiving part.

14. The power device package of claim 12, wherein the bushing member further comprises a second protruding part protruding from a surface of the mold member at a second end of the receiving part.

15. The power device package of claim 12, wherein the bushing member further comprises an uneven part on the outer circumference surface of the receiving part.

16. The power device package of claim 12, wherein the bushing member comprises a recess part in the outer circumference surface of the receiving part.

17. The power device package of claim 1, wherein the bushing member is spaced apart from the substrate.

18. The power device package of claim 1, wherein the mold member is injected using a transfer molding process.

19. The power device package of claim 1, wherein the molding member directly covers an outer circumference surface of the at least one bushing member.

20. The power device package of claim 1, wherein the bolt member has a head portion, a first body portion, and a second body portion, and

wherein the first body portion is fixed to the through hole, and the second body portion is fixed to the heat sink.

21. The power device package of claim 20, wherein the bushing member has a first surface and a second surface opposite to the first surface,

wherein the heat sink directly contacts with the first surface, and

wherein the head portion of the bolt member does not contact with the mold member but with the second surface of the bushing member, thereby preventing stress applied to the mold member when inserting the bolt member into the through hole of the bushing member.

22. A power device package comprising:

a substrate;

at least one semiconductor device mounted on the substrate;

a mold member sealing the substrate and the semiconductor device, the mold member having an upper surface and a lower surface; and

at least one bushing member fixed to the mold member,

wherein the at least one bushing member includes a first surface and a second surface, the first surface being exposed by the upper surface of the mold member and the second surface being exposed by the lower surface of the mold member, and

wherein each of the at least one bushing member comprises a through hole penetrating the mold member, wherein the second surface is at a height greater than the lower surface so that the second surface protrudes from the lower surface.

23. The power device package of claim 22, further comprising:

a heat sink directly contacting with the second surface and the lower surface; and

at least one bolt member having a head portion, a first body portion, and a second body portion,

wherein the first body portion is fixed to the through hole, and the second body portion is fixed to the heat sink.

24. The power device package of claim 23, wherein a head portion of the bolt member directly contacts with the first surface of the bushing member.

25. The power device package of claim 23, wherein a head portion of the bolt member does not contact with the mold member, but does contact with the first surface of the bushing member, thereby preventing stress applied to the mold member when inserting the bolt member into the through hole of the bushing member.