3D semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a first transistor layer; and
a second transistor layer three dimensionally overlaying the first transistor layer where each layer comprises a single monocrystalline structure, wherein said first transistor layer comprises a plurality of flip-flops each having an additional signal selectively coupleable to its input or output, said signal generated by said second transistor layer, said semiconductor device further including first logic circuits of the first transistor layer selectively replaceable by second logic circuits of the second transistor layer.
4 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes a first transistor layer and a second transistor layer overlaying the first transistor layer, wherein said first transistor layer comprises a plurality of flip-flops each having a selectively coupleable additional input generated by said second transistor layer.
-
Citations
19 Claims
-
1. A semiconductor device, comprising:
-
a first transistor layer; and a second transistor layer three dimensionally overlaying the first transistor layer where each layer comprises a single monocrystalline structure, wherein said first transistor layer comprises a plurality of flip-flops each having an additional signal selectively coupleable to its input or output, said signal generated by said second transistor layer, said semiconductor device further including first logic circuits of the first transistor layer selectively replaceable by second logic circuits of the second transistor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A semiconductor device, comprising:
-
a first transistor layer; and a second transistor layer three dimensionally overlaying the first transistor layer where each layer comprises a single monocrystalline structure, wherein said first transistor layer comprises a plurality of sequential cells according to a net-list, and wherein each sequential cell has an additional signal selectively coupleable to its input or output, said signal generated by said second transistor layer, said semiconductor device further including first logic circuits of the first transistor layer selectively replaceable by second logic circuits of the second transistor layer. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. A semiconductor device, comprising:
-
a first transistor layer, a second transistor layer three dimensionally overlaying the first transistor layer where each layer is fabricated as a single monocrystalline structure, including first logic circuits of the first transistor layer selectively replaceable by second logic circuits of the second transistor layer, and metal interconnect to form a logic circuit comprising transistors of said second transistor layer, wherein said metal interconnect is defined by direct-write-ebeam. - View Dependent Claims (15, 16, 17, 18, 19)
-
Specification