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3D semiconductor device

  • US 8,258,810 B2
  • Filed: 09/30/2010
  • Issued: 09/04/2012
  • Est. Priority Date: 09/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first transistor layer; and

    a second transistor layer three dimensionally overlaying the first transistor layer where each layer comprises a single monocrystalline structure, wherein said first transistor layer comprises a plurality of flip-flops each having an additional signal selectively coupleable to its input or output, said signal generated by said second transistor layer, said semiconductor device further including first logic circuits of the first transistor layer selectively replaceable by second logic circuits of the second transistor layer.

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