Vacuum coupled tool apparatus for dry transfer printing semiconductor elements

• US 8,261,660 B2
• Filed: 07/22/2009
• Issued: 09/11/2012
• Est. Priority Date: 07/22/2009
• Status: Expired due to Fees

• Current Assignee: X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: Semprius, Inc.
• Inventors: Menard, Etienne
• Primary Examiner(s): Culler, Jill
• Application Number:
  US12/507,262
• Publication Number:
  US 20110018158A1
• Time in Patent Office: 1,147 Days
• Field of Search: 101/32
• US Class Current: 101/32
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/67282 Marking devices
• CPC Class Codes: H01L 2224/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/74 Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01067 Holmium [Ho]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Provided are an optimized tool apparatus and methods for dry transfer printing of semiconductor elements with high yield and good placement accuracy. The tool apparatus comprises a vacuum coupled fast peel apparatus that provides high pickup yield of the semiconductor elements. In an aspect, this vacuum coupled apparatus provides high pickup rates during pickup of the semiconductor elements from a donor/source wafer. Provided is a tool apparatus for dry transfer printing with a reinforced composite stamp having a thin glass-backing. The tool apparatus also comprises a pressure regulated micro-chamber which provides precise control of a composite stamp lamination and de-lamination. In an aspect, the micro-chamber has an internal cavity volume that is variably controlled, thereby providing precise control of the force on the stamp, and corresponding separation velocity, and improved semiconductor element pick-up and/or placement.

Claims

1. A tool apparatus for dry transfer printing of semiconductor elements, said apparatus comprising:

a base plate having a center opening;

a top plate operationally connected to said base plate, wherein said top plate comprises an optically transparent window;

a transfer stamp for transfer printing, wherein said stamp has a top surface and a transfer surface positioned on an external surface of said stamp and oriented in a direction opposite to the direction of said top surface for transferring said semiconductor elements from a donor substrate;

a mount for operationally connecting said transfer stamp to said base plate;

an actuator operationally connected to said top plate for controllably moving said top plate; and

a micro-chamber having an internal cavity volume that separates said transfer stamp from said top plate, wherein said micro-chamber is capable of controllable pressurization and rapid depressurization by an increase in said internal cavity volume, wherein upon pressurization said internal cavity exerts a controllable pressure against said transfer stamp top surface, wherein said internal cavity has a volume that is variably controlled by said actuator moving said top plate, said internal cavity formed by said top plate and said transfer stamp top surface;

wherein;

an increase in said internal cavity volume by said top plate movement away from said stamp top surface decreases pressure in said internal cavity volume thereby moving said transfer surface in a direction away from said donor substrate.

2. The apparatus of claim 1, wherein said transfer stamp is a composite stamp.

3. The apparatus of claim 2 wherein said transfer stamp comprises:

a deformable layer having an internal surface and an external surface positioned opposite said internal surface, wherein said external surface is said transfer surface and comprises a plurality of relief features;

a stiff support layer connected to said deformable layer internal surface; and

a reinforcement layer at least partially disposed between said deformable layer and said stiff support layer, wherein said reinforcement layer is configured to provide an anisotropic distribution of Young'"'"'s modulus, flexural rigidity, or stiffness providing vertical flexibility while maintaining in-plane rigidity;

wherein said stamp top surface corresponds to at least a portion of said stiff support layer.

4. The apparatus of claim 3, wherein said transfer stamp further comprises an anti-flexure feature connected to a top face of said stiff support layer.

5. The apparatus of claim 2, wherein upon pressurization of said micro-chamber, said internal cavity of said micro-chamber exerts a uniform pressure force against said transfer stamp top surface.

6. The apparatus of claim 5, further comprising a substrate surface opposed to said transfer surface, wherein upon pressurization of said micro-chamber, said transfer surface conformally contacts said substrate surface.

7. The apparatus of claim 6, wherein upon depressurization of said micro-chamber by movement of said top plate to increase said internal cavity volume, said conformal contact is removed.

8. The apparatus of claim 1, wherein said mount comprises a stamp clamping ring for securing said transfer stamp to said bottom plate.

9. The apparatus of claim 1, wherein said top plate comprises:

a window actuating fixture;

a window; and

a mounting frame having a first end that connects said window to said base plate and a second end connected to said window actuating fixture.

10. The apparatus of claim 9, wherein said micro-chamber internal cavity volume is formed by said window and said stamp top surface.

11. The apparatus of claim 9, wherein said window actuating fixture comprises an actuator receiving means that operationally connects said actuator.

12. The apparatus of claim 11, wherein said window actuating fixture comprises three actuator receiving means and wherein each actuator receiving means is operationally connected to an individual actuator.

13. The apparatus of claim 1, wherein said actuator is capable of inducing a pressure drop across said stamp and a corresponding separation force by a difference in a force against said stamp top surface and a force against said stamp transfer surface by increasing said internal cavity volume.

14. The apparatus of claim 13, wherein said separation force is generated in less than 20 ms.

15. The apparatus of claim 1, wherein said actuator is capable of moving said top plate at a velocity that is greater than or equal to 5 mm/s.

16. The apparatus of claim 1, wherein said actuator and micro-chamber cavity pressure variation are capable of separating said stamp from said donor substrate at a velocity that is greater than or equal to 5 mm/s.

17. The apparatus of claim 1, further comprising:

a passage traversing from an external surface of said top plate to an internal surface of said top plate;

a pressure-regulated vacuum source operationally connected to said passage capable of regulating pressure in said internal cavity; and

a passage inlet valve for forming an air-tight seal within said micro-chamber.

18. The apparatus of claim 1, further comprising a second actuator operationally connected to said base plate assembly for generating stamp motion in a direction substantially parallel to a plane formed by a transfer surface of said transfer stamp.

19. The apparatus of claim 1, further comprising a plurality of mechanical spacers connected to an internal surface of said top plate, a top surface of said stamp, or both.

20. A method of transferring a semiconductor element from a donor surface to a stamp transfer surface, said method comprising the steps of:

providing a tool apparatus for dry transfer printing, said tool apparatus comprising;

a top plate;

a base plate;

a mount capable of operationally connecting a transfer stamp to said base plate; and

an actuator operationally connected to said top plate capable of controllably moving said top plate;

attaching a transfer stamp to said base plate with said mount, wherein said stamp has a top surface that forms one surface of a pressurizable microchamber having an internal cavity that separates said transfer stamp from said top plate;

providing a donor substrate surface comprising a semiconductor element;

aligning said stamp transfer surface with said donor substrate surface;

pressurizing said internal cavity thereby establishing conformal contact between said stamp transfer surface and said donor substrate surface, said semiconductor element, or both;

decreasing said internal cavity pressure, wherein said decrease in internal cavity pressure is achieved by forming an air-tight seal around said micro-chamber cavity and increasing said cavity volume by activating said actuator to move said top plate in a direction that is away from said donor substrate, thereby transferring said semiconductor element from said donor surface to said stamp transfer surface.

21. The method of claim 20, wherein said stamp is a composite stamp comprising:

a deformable layer having an internal surface and an external surface positioned opposite said internal surface, wherein said external surface comprises a plurality of protrusions;

a stiff support layer connected to said deformable layer internal surface; and

a reinforcement layer at least partially disposed between said deformable layer and said stiff support layer, wherein said reinforcement layer is configured to provide an anisotropic distribution of Young'"'"'s modulus, flexural rigidity, or stiffness providing vertical flexibility while maintaining in-plane rigidity;

wherein said stamp top surface corresponds to at least a portion of said stiff support layer.

22. The method of claim 20, wherein said top plate further comprises a micro-chamber inlet port for controllably pressurizing said internal cavity, said method further comprising:

establishing conformal contact between said transfer stamp receiving surface with said donor substrate surface;

closing said micro-chamber inlet port; and

activating said actuator to move said top plate in a direction that is away from said donor substrate, thereby increasing said internal cavity volume and decreasing said internal cavity pressure to separate said stamp transfer surface from said donor substrate surface.

23. The method of claim 22, wherein said top plate is moved away from said substrate at a separation speed, wherein said separation speed is greater than or equal to 5 mm/s.

24. The method of claim 22, wherein said actuator and micro-chamber cavity pressure variation are capable of separating said stamp from said substrate at a velocity greater than or equal to 5 mm/s.

25. The method of claim 22, wherein said internal cavity is depressurized at a rate that is selected from a range that is greater than or equal to about 50 psi/s (340 kPa/s) and less than or equal to about 150 psi/s (1030 kPa/s).

26. The method of claim 25, wherein said rate of depressurization is about 100 psi/s (690 kPa/s).

27. The method of claim 20, wherein said internal cavity is pressurized to a pressurized value that is selected from a range that is greater than or equal to 0.4 psig and less than or equal to 2 psig during said pressurizing step, and said internal cavity pressure is decreased to a separation value that is less than or equal to −

0.1 psig, thereby releasing said stamp transfer surface from said donor surface.

28. The method of claim 20, further comprising:

providing a receiving surface;

aligning said stamp transfer surface having said semiconductor element with said receiving surface;

establishing conformal contact between at least a portion of said transfer surface and said receiving surface; and

transferring said semiconductor element from said transfer surface to said receiving surface.

29. The method of claim 28, wherein said transferring step comprises:

offsetting said transfer stamp a horizontal distance relative to said receiving surface, thereby generating an in-plane shear force in said stamp; and

separating said stamp from said receiving surface by moving said stamp in a vertical direction relative to said substrate, thereby printing said semiconductor element to said receiving surface.

30. The method of claim 20, wherein said alignment is achieved optically, mechanically, or both.

31. The method of claim 20, further comprising:

providing a negative pressure relative to ambient pressure to said internal cavity after said semiconductor element is transferred to said transfer surface, thereby reducing the time required to reach steady state pressure equilibrium in said internal cavity.

32. The method of claim 20, wherein a plurality of semiconductor elements are simultaneously transferred to said transfer surface.

33. A transfer printing tool comprising:

a top plate;

a stamp having a transfer surface, a top surface, and an elastomer layer supported by a stiff support layer, wherein said transfer surface corresponds to an external surface of said stamp and oriented in a direction opposite to the direction of said top surface for transfer printing from a donor substrate or to a receiving substrate;

an antiflexural feature connected to said stiff support layer;

a mount for securing said stamp to said top plate; and

a microchamber having an internal cavity volume formed from said top plate and said stamp top surface, wherein said microchamber separates said transfer stamp from said top plate, said internal cavity volume having a variable and controllable volume by movement of said top plate, wherein movement of said top plate in a direction away from said stamp top surface increases said internal cavity volume and decreases pressure in said internal cavity volume, thereby moving said transfer surface in a direction away from said donor or receiving substrate.