High-sensitivity z-axis vibration sensor and method of fabricating the same

• US 8,263,426 B2
• Filed: 07/24/2009
• Issued: 09/11/2012
• Est. Priority Date: 12/03/2008
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Ko, Sang Choon, Jun, Chi Hoon, Yu, Byoung Gon, Choi, Chang Auck
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): Munoz, Andres
• Application Number:
  US12/509,360
• Publication Number:
  US 20100132467A1
• Time in Patent Office: 1,145 Days
• Field of Search: None
• US Class Current: 438/53
• CPC Class Codes: G01H 11/06 by electric means
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H04R 19/005 using semiconductor materials

Abstract

Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

Claims

1. A method of fabricating a high-sensitivity MEMS-type z-axis vibration sensor, comprising:

providing a silicon on insulator (SOI) substrate comprising an upper silicon layer disposed over a thermal oxide layer, and a silicon wafer disposed under the thermal oxide layer;

doping the upper silicon layer with impurities to form a lower electrode;

forming a silicon dummy ring in the doped upper silicon layer to define a center mass region of the doped upper silicon layer;

forming a second upper oxide layer to a predetermined thickness and a polysilicon layer over the doped upper silicon layer;

doping the polysilicon layer with impurities to form a center ground electrode;

forming a sacrificial oxide layer and an upper electrode over the doped polysilicon layer;

etching a lower surface of the silicon wafer to isolate the center mass region of the doped upper silicon layer; and

etching the sacrificial oxide layer and the second upper oxide layer through an upper surface of the upper electrode, and forming a vibration space in which the doped polysilicon layer is capable of vibrating in a z-axis direction.

2. The method according to claim 1, wherein the upper silicon layer is doped with POCl₃.

3. The method according to claim 1, wherein forming the silicon dummy ring comprises:

forming a first upper oxide layer over the doped upper silicon layer and patterning the first upper oxide layer;

etching the doped upper silicon layer using the patterned first upper oxide layer as an etch mask to form the silicon dummy ring in the doped upper silicon layer; and

removing the patterned first upper oxide layer using a fluoric acid aqueous solution.

4. The method according to claim 1, further comprising:

doping the second upper oxide layer with POCl₃;

forming a phosphosilicate glass (PSG) layer over the second upper oxide layer to increase an etch rate; and

forming a third upper oxide layer over the PSG layer.

5. The method according to claim 1, wherein forming the polysilicon layer comprises:

forming a first nitride layer over the second upper oxide layer;

forming the polysilicon layer over the first nitride layer;

forming a second nitride layer over the doped polysilicon layer; and

forming a first metal layer comprising titanium or platinum over the second nitride layer,

wherein the polysilicon layer is doped with POCl₃.

6. The method according to claim 1, further comprising:

patterning the sacrificial oxide layer;

forming a second metal layer comprising titanium or platinum over the patterned sacrificial oxide layer; and

forming a third metal layer comprising titanium or platinum over the upper electrode,

wherein the upper electrode is formed by plating an upper surface of the second metal layer.

7. The method according to claim 1, wherein etching the silicon wafer comprises:

wet-etching the silicon wafer to expose the thermal oxide layer; and

etching the exposed thermal oxide layer until the silicon dummy ring is separated from the doped upper silicon layer.

8. The method according to claim 1, further comprising:

vacuum packaging the structure obtained by the method of claim 1 in a transistor outline (TO) can-type or surface mount design (SMD)-type package.