Semiconductor device and method of forming an interposer package with through silicon vias
First Claim
1. A method of making a semiconductor device, comprising:
- providing a carrier for supporting the semiconductor device;
mounting a first semiconductor die over the carrier;
mounting a first dummy die having a first through-silicon via (TSV) over the carrier;
encapsulating the first semiconductor die and the first dummy die using a wafer molding material;
removing the carrier;
forming a first redistribution layer (RDL) over a first surface of the first semiconductor die and a first surface of the first dummy die to electrically connect the first TSV and a contact pad of the first semiconductor die;
forming an insulation layer over the first RDL;
forming a second RDL over a second surface of the first dummy die opposite the first surface of the first dummy die and electrically connected to the first TSV; and
connecting a semiconductor package to the second RDL.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a carrier for supporting the semiconductor device. A first semiconductor die is mounted over the carrier. A first dummy die having a first through-silicon via (TSV) is mounted over the carrier. The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. The carrier is removed. A first redistribution layer (RDL) is formed over a first surface of the first semiconductor die and a first surface of the first dummy die to electrically connect the first TSV and a contact pad of the first semiconductor die. An insulation layer is formed over the first RDL. A second RDL is formed over a second surface of the first dummy die opposite the first surface of the first dummy die and electrically connected to the first TSV. A semiconductor package is connected to the second RDL.
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Citations
31 Claims
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1. A method of making a semiconductor device, comprising:
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providing a carrier for supporting the semiconductor device; mounting a first semiconductor die over the carrier; mounting a first dummy die having a first through-silicon via (TSV) over the carrier; encapsulating the first semiconductor die and the first dummy die using a wafer molding material; removing the carrier; forming a first redistribution layer (RDL) over a first surface of the first semiconductor die and a first surface of the first dummy die to electrically connect the first TSV and a contact pad of the first semiconductor die; forming an insulation layer over the first RDL; forming a second RDL over a second surface of the first dummy die opposite the first surface of the first dummy die and electrically connected to the first TSV; and connecting a semiconductor package to the second RDL. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, comprising:
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providing a temporary carrier; mounting a first semiconductor die over the temporary carrier; mounting a first dummy die having a first through-silicon via (TSV) over the temporary carrier; depositing encapsulant over the first semiconductor die and the first dummy die; forming a first conductive layer electrically connected to the first semiconductor die and first TSV; and forming a second conductive layer electrically connected to the first TSV. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of making a semiconductor device, comprising:
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providing a carrier; mounting a first semiconductor die over the carrier; mounting a second semiconductor die including a conductive via over the carrier; forming a first conductive layer connected to the first semiconductor die and the conductive via; and forming a second conductive layer connected to the conductive via. - View Dependent Claims (17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a first semiconductor die; a first dummy die including a through-silicon via (TSV) extending through the first dummy die such that the TSV has a first surface coplanar with a first surface of the first semiconductor die; encapsulant deposited over and extends between the first semiconductor die and the first dummy die; a first conductive layer formed over the first surface of the first semiconductor die and the first surface of the TSV to electrically connect the first semiconductor die and the TSV; and a second conductive layer connected to a second surface of the TSV opposite the first surface of the TSV. - View Dependent Claims (22, 23, 24, 25)
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26. A semiconductor device, comprising:
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a first semiconductor die; a first dummy die including a via that has a first surface coplanar with a first surface of the first semiconductor die; a first conductive layer formed over the first surface of the first semiconductor die and the first surface of the via to electrically connect the first semiconductor die and the via; and a second conductive layer connected to a second surface of the via opposite the first surface of the via. - View Dependent Claims (27, 28, 29, 30, 31)
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Specification