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TFT substrate and TFT substrate manufacturing method

  • US 8,263,977 B2
  • Filed: 11/30/2006
  • Issued: 09/11/2012
  • Est. Priority Date: 12/02/2005
  • Status: Expired due to Fees
First Claim
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1. A TFT substrate comprising:

  • a substrate;

    a first oxide layer formed above the substrate;

    a second oxide layer formed above the first oxide layer with a channel part separating parts of the second oxide layer;

    the channel part being defined by those separate parts of the second oxide layer with the first oxide layer at its base;

    a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer;

    a gate electrode and a gate wire formed above the gate insulating film;

    wherein the first oxide layer is an n-type oxide semiconductor layer and the second oxide layer is an oxide conductor layer; and

    wherein at least one of a source wire, a drain wire, a source electrode, a drain electrode and a pixel electrode is formed from the second oxide layer.

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