Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

• US 8,263,987 B2
• Filed: 06/17/2011
• Issued: 09/11/2012
• Est. Priority Date: 10/19/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Pun Jae, Lee, Jin Hyun, Park, Ki Yeol, Cho, Myong Soo
• Primary Examiner(s): Sefer, A.
• Application Number:
  US13/163,107
• Publication Number:
  US 20110241066A1
• Time in Patent Office: 452 Days
• Field of Search: 257/89, 257 98- 99
• US Class Current: 257/89
• CPC Class Codes: F02M 19/0235 Arrangements of several spray nozzles not provided for in F02M3/00 or F02M11/00
• CPC Class Codes: F02M 9/127 Axially movable throttle valves concentric with the axis of the mixture passage
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, insulating layer, and a first electrode layer disposed in that order; and

a contact hole extending from a top surface of the first electrode layer to a portion of the first conductivity type semiconductor layer,

wherein the second electrode layer has an exposed area on which the first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer are not disposed, and

wherein an electrode of the first electrode layer extends through the contact hole to the portion of the first conductivity type semiconductor layer, and is electrically insulated from the second conductivity type semiconductor layer and the active layer.

2. The semiconductor light emitting device of claim 1, further comprising:

an electrode pad disposed on the exposed area of the second electrode layer.

3. The semiconductor light emitting device of claim 1, wherein the insulating layer is disposed on an inner side surface of the contact hole.

4. The semiconductor light emitting device of claim 1, wherein the exposed area of the second electrode layer is disposed at a corner of the second electrode layer.

5. The semiconductor light emitting device of claim 1, wherein the exposed area of the second electrode layer is a via hole penetrating the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

6. The semiconductor light emitting device of claim 1, wherein the second electrode layer comprises one metal selected from a group consisting of Ag, Al, and Pt.

7. The semiconductor light emitting device of claim 1, wherein a top surface of the first conductivity type semiconductor layer has an irregular pattern.

8. The semiconductor light emitting device of claim 7, wherein the irregular pattern has a photonic crystal structure.

9. The semiconductor light emitting device of claim 1, wherein the exposed area is disposed on a top surface of the second electrode layer.