Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device, comprising:
- a first semiconductor layer comprising a plurality of concave portions, the plurality of concave portions disposed on an upper portion of the first semiconductor layer;
a reflector having a concaved upper surface, the reflector on at least one of the plurality of concave portions of the first semiconductor layer;
a plurality of island patterns disposed in an lower portion of the first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
an active layer on the second semiconductor layer; and
a third semiconductor layer on the active layer,wherein a material of the reflector differs from materials of the first semiconductor layer and the second semiconductor layer,wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer,wherein the plurality of island patterns are vertically aligned with the plurality of concave portions of the first semiconductor layer, andwherein a lower surface of the second semiconductor layer includes protrusions on the concaved top surface of the reflector, the protrusions protruding toward the first semiconductor layer.
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Abstract
A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
32 Citations
17 Claims
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1. A semiconductor light emitting device, comprising:
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a first semiconductor layer comprising a plurality of concave portions, the plurality of concave portions disposed on an upper portion of the first semiconductor layer; a reflector having a concaved upper surface, the reflector on at least one of the plurality of concave portions of the first semiconductor layer; a plurality of island patterns disposed in an lower portion of the first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; and a third semiconductor layer on the active layer, wherein a material of the reflector differs from materials of the first semiconductor layer and the second semiconductor layer, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, wherein the plurality of island patterns are vertically aligned with the plurality of concave portions of the first semiconductor layer, and wherein a lower surface of the second semiconductor layer includes protrusions on the concaved top surface of the reflector, the protrusions protruding toward the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor light emitting device, comprising:
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a first semiconductor layer comprising a plurality of concave portions which are disposed on an upper portion of the first semiconductor layer; a first electrode under the first semiconductor layer; a reflector on at least one of the plurality of concave portions of the first semiconductor layer; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including a first type dopant; an active layer on the second semiconductor layer; and a third semiconductor layer on the active layer, the third semiconductor layer including a second type dopant; and an electrode layer on the third semiconductor layer, wherein a material of the reflector differs from materials of the first semiconductor layer and the second semiconductor layer, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, wherein the reflector is formed of a metal material, and wherein a lower surface of the second semiconductor layer is physically contacted with an upper surface of the first semiconductor layer and a portion of the reflector. - View Dependent Claims (17)
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Specification