Methods and apparatus for measuring analytes using large scale FET arrays
First Claim
1. An apparatus comprising:
- a sensor array of at least 105 sensors, a given sensor in the array of sensors comprising;
a chemFET having a gate dielectric with a characteristic thickness, a floating gate, and a characteristic threshold voltage, wherein the characteristic threshold voltage of the chemFET is affected by trapped charge; and
a transistor coupled to the floating gate of the chemFET, the transistor providing a current path for charge accumulated on the floating gate.
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Abstract
Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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Citations
18 Claims
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1. An apparatus comprising:
a sensor array of at least 105 sensors, a given sensor in the array of sensors comprising; a chemFET having a gate dielectric with a characteristic thickness, a floating gate, and a characteristic threshold voltage, wherein the characteristic threshold voltage of the chemFET is affected by trapped charge; and a transistor coupled to the floating gate of the chemFET, the transistor providing a current path for charge accumulated on the floating gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 17, 18)
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13. A chemFET sensor array comprising:
an array of at least 105 sensors, a given sensor in the array of sensors comprising; a chemFET including a first gate dielectric between a substrate and a floating gate, and having a characteristic threshold voltage affected by trapped charge in the first gate dielectric; and a transistor including a second gate dielectric between a gate terminal and the substrate, wherein the gate terminal is coupled to the floating gate of the chemFET, and the second gate dielectric has a thickness less than that of the first gate dielectric. - View Dependent Claims (14, 15, 16)
Specification