CMOS photogate 3D camera system having improved charge sensing cell and pixel geometry
First Claim
1. A photosurface for receiving and registering light from a scene, the photosurface comprising:
- a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface;
a single, first conductive region substantially overlaying all of the first semiconductor region;
a plurality of second semiconductor regions, each surrounded by the first semiconductor region;
a plurality of second conductive regions, each second conductive region surrounds an associated one of the second semiconductor regions and is electrically isolated from the first conductive region, each second conductive region has an opening, the associated second semiconductor region completely fills the opening;
wherein when a respective one of the second conductive regions is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the respective second semiconductor region, wherein electrons generated by light incident on the first semiconductor region migrate to the respective second semiconductor region from substantially all azimuthal directions relative to the second semiconductor region.
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Accused Products
Abstract
A photosurface for receiving and registering light from a scene, the photosurface comprising: a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single, first conductive region substantially overlaying all of the first semiconductor region; at least one second semiconductor region surrounded by the first semiconductor region; a different second conductive region for each second semiconductor region that surrounds the second semiconductor region and is electrically isolated from the first conductive region; wherein when the second conductive region is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the second semiconductor region.
18 Citations
20 Claims
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1. A photosurface for receiving and registering light from a scene, the photosurface comprising:
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a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single, first conductive region substantially overlaying all of the first semiconductor region; a plurality of second semiconductor regions, each surrounded by the first semiconductor region; a plurality of second conductive regions, each second conductive region surrounds an associated one of the second semiconductor regions and is electrically isolated from the first conductive region, each second conductive region has an opening, the associated second semiconductor region completely fills the opening; wherein when a respective one of the second conductive regions is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the respective second semiconductor region, wherein electrons generated by light incident on the first semiconductor region migrate to the respective second semiconductor region from substantially all azimuthal directions relative to the second semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A photosurface for imaging a scene comprising:
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a light sensitive region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single photogate overlaying the light sensitive region; a plurality of charge collecting regions, each of which is surrounded by the light sensitive region and in which charge generated in the light sensitive region is stored; and for each of the charge collecting regions, a transfer gate that completely surrounds the charge collecting region, each transfer gate has an opening, the respective charge collecting region completely fills the opening, each transfer gate transfers charge from the light sensitive region to the charge collecting region within the opening of the respective transfer gate. - View Dependent Claims (16)
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17. A CMOS-type light detector cell comprising:
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a photogate; a channel implant in a structure underlying the photogate; a plurality of floating diffusions formed within the channel implant; and a plurality of transfer gates, each transfer gate completely surrounds an associated one of the floating diffusions and is operable to permit electrons accumulated under the photogate to travel through the channel implant to the associated floating diffusion, wherein the photogate is a substantially continuous body extending over the channel implant, and includes a plurality of separate openings each of which surrounds one of the floating diffusions and its associated transfer gate, each of the transfer gates and its associated opening are aligned as concentric rings or a multi-sided shapes, each transfer gate having an inner opening with the associated floating diffusion positioned below and completely filling said inner opening. - View Dependent Claims (18, 19, 20)
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Specification