Lithographic apparatus and device manufacturing method using interferometric and other exposure

• US 8,264,667 B2
• Filed: 05/04/2006
• Issued: 09/11/2012
• Est. Priority Date: 05/04/2006
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Troost, Kars Zeger, Baselmans, Johannes Jacobus Matheus, Greeneich, James Sherwood
• Primary Examiner(s): Nguyen, Hung Henry
• Assistant Examiner(s): Whitesell Gordon, Steven H
• Application Number:
  US11/417,210
• Publication Number:
  US 20070258078A1
• Time in Patent Office: 2,322 Days
• Field of Search: 355/67, 355/70, 355/72, 355/53, 359/577
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect

Abstract

A lithographic apparatus including an exposure unit that exposes parallel lines on a target area of a substrate by projecting two beams of radiation onto the substrate. The two beams of radiation are projected such that they interfere with each other to form the parallel lines. An actuator continuously moves the substrate relative to the exposure unit, while the exposure unit exposes the parallel lines on the target areas on the substrate.

Claims

1. A lithographic apparatus for exposing a pattern on a substrate, comprising:

a substrate support that is configured to support a substrate;

an exposure unit that is configured to project two beams of pulsed radiation onto the substrate, such that each of the two beams of pulsed radiation interfere with each other to produce a series of separate exposures comprising a first exposure during a first exposure period and a second exposure during a second exposure period, the first and second exposure periods being successive, to expose a first set of parallel lines whereby a first target area of a plurality of target areas is exposed during the first exposure period and a second target area of the plurality of target areas is exposed during the second exposure period on the substrate during each pass across the substrate, each of the first and second target areas being in an area smaller than a width of the substrate; and

an actuator that is configured to continuously move the substrate support relative to the exposure unit during exposure of the parallel lines on the first and second target areas of the substrate,

wherein during a third exposure period to expose a second set of parallel lines, only, one of the second set of parallel lines overlaps and aligns with only one of the parallel lines of the first set of parallel lines.

2. The lithographic apparatus of claim 1, wherein the actuator is configured to move the substrate support relative to the exposure unit in a direction parallel to the parallel lines exposed by the exposure unit during the exposure periods.

3. The lithographic apparatus of claim 2, wherein the two beams of pulsed radiation projected onto the substrate by the exposure unit are pulsed in synchronism with each other.

4. The lithographic apparatus of claim 3, wherein a pulse rate of the two beams of radiation projected onto the substrate and a velocity of the substrate support relative to the exposure unit are arranged such that a first respective one of the target areas on the substrate in which a first one of the parallel lines are exposed by a pulse of the two beams is immediately adjacent a second respective one of the target areas on the substrate in which a second one of the parallel lines are exposed by a next pulse of the two beams.

5. The lithographic apparatus of claim 3, wherein a timing of the first and second exposure periods of the beams of radiation projected onto the substrate and a velocity of the substrate support relative to the exposure unit are configured such that the first target area on the substrate in which a first one of the parallel lines are exposed by the two beams overlaps with the second target area on the substrate in which a second one of the parallel lines are exposed by the two beams.

6. The lithographic apparatus of claim 5, wherein the exposure unit is configured such that a distribution of radiation intensity along the parallel lines within each of the plurality of target areas on the substrate in which the parallel lines are exposed in exposure periods of the two beams is arranged, such that the radiation intensity is lower in a portion of the first target area that overlaps with the second target area exposed by the two beams than a portion of a target area that does not overlap with another one of the target areas exposed by the two beams.

7. The lithographic apparatus of claim 6, wherein the exposure unit comprises:

first and second illumination systems configured to condition the respective two beams of pulsed radiation; and

a radiation intensity distribution controller provided in a pupil plane of at least one of the first and second illumination systems, the radiation intensity distribution controller being configured to control the distribution of radiation intensity along the parallel lines within each of the target areas.

8. The lithographic apparatus of claim 2, wherein the actuator is configured to move the substrate support relative to the exposure unit in a direction perpendicular to the parallel lines exposed by the exposure unit after the first and second target areas on the substrate have been exposed, such that a subsequent set of the target areas are exposed by again moving the substrate support relative to the exposure unit in a direction parallel to the parallel lines.

9. The lithographic apparatus of claim 8, wherein the first and second target areas on the substrate overlap.

10. The lithographic apparatus of claim 9, wherein the first set of the target areas on the substrate are exposed when the substrate table is moving relative to the exposure unit in one of the opposite or same direction to the movement of the substrate table relative to the exposure unit when the second set of the target areas on the substrate are exposed.

11. The lithographic apparatus of claim 9, wherein the first and second sets of the target areas on the substrate are immediately adjacent each other.

12. The lithographic apparatus of claim 11, wherein the first set of the target areas on the substrate are exposed when the substrate table is moving relative to the exposure unit in one of the opposite or same direction to the movement of the substrate table relative to the exposure unit when the second set of the target areas on the substrate are exposed.

13. The lithographic apparatus of claim 1, wherein the actuator is configured to move the substrate support relative to the exposure unit in a direction perpendicular to the parallel lines exposed by the exposure unit while the exposure unit exposes the parallel lines on the target areas on the substrate.

14. The lithographic apparatus of claim 13, wherein the two beams of radiation projected onto the substrate by the exposure unit are pulsed in synchronism with each other.

15. The lithographic apparatus of claim 14, wherein a pulse rate of the two beams of radiation projected onto the substrate, a spatial distribution of the parallel lines exposed in an area on the substrate, and a velocity of the substrate support relative to the exposure unit are arranged such that the separation between the parallel lines in a first one of the target areas on the substrate in which the parallel lines are exposed by the pulse of the two beams that is closest to a second one of the target areas on the substrate in which the parallel lines are exposed by a next pulse of the two beams, and a nearest line of the parallel lines in the second area on the substrate in which the parallel lines are exposed by the next pulse of the beams is the same as a separation of adjacent ones of the parallel lines within each of the target areas.

16. The lithographic apparatus of claim 14, wherein a pulse rate of the two beams of radiation projected onto the substrate, a spatial distribution of the parallel lines exposed on the substrate, and a velocity of the substrate support relative to the exposure unit are arranged such that at least one line of the parallel lines exposed by a pulse of the two beams is exposed at a same location on the substrate as a line of the parallel lines exposed by a next pulse of the two beams.

17. The lithographic apparatus of claim 16, wherein the exposure unit is configured such that a radiation intensity of the parallel lines exposed by the pulse of the two beams at the same location on the substrate as the parallel lines exposed by another pulse of the two beams is lower than the parallel lines exposed by a single pulse of the two beams.

18. The lithographic apparatus of claim 13, wherein the actuator is configured to move the substrate support relative to the exposure unit in a direction parallel to the parallel lines exposed by the exposure unit after a first set of the target areas on the substrate have been exposed such that a second set of the target areas are subsequently be exposed by again moving the substrate support relative to the exposure unit in a direction perpendicular to the parallel lines.

19. The lithographic apparatus of claim 18, wherein the first and second sets of the target areas on the substrate overlap.

20. The lithographic apparatus of claim 19, wherein the first set of target areas on the substrate are exposed when the substrate table is moving relative to the exposure unit in an opposite or same direction to a movement of the substrate table relative to the exposure unit when the second set of target areas on the substrate are exposed.

21. The lithographic apparatus of claim 18, wherein the first and second sets of the target areas on the substrate are immediately adjacent each other.

22. The lithographic apparatus of claim 21, wherein the first set of target areas on the substrate are exposed when the substrate table is moving relative to the exposure unit in an opposite or same direction to a movement of the substrate table relative to the exposure unit when the second set of target areas on the substrate are exposed.

23. The lithographic apparatus of claim 1, wherein the lithographic apparatus is configured to:

commence projecting the two beams of pulsed radiation from the exposure unit when the substrate support is positioned by the actuator such that the parallel lines are not exposed on the substrate by the exposure unit; and

move continuously the substrate table relative to the exposure unit, at least until a predetermined amount of the plurality of targets areas on the substrate have been exposed by the exposure unit.

24. The lithographic apparatus of claim 1, wherein the lithographic apparatus is configured to continue projecting the two beams of pulsed radiation from the exposure unit and to continuously move the substrate table relative to the exposure unit, at least until a predetermined amount of the parallel lines are no longer exposed on the substrate.

25. The lithographic apparatus of claim 1, wherein the lithographic apparatus is configured such that, during the exposure of the target areas on the substrate, the exposure unit exposes the parallel lines on at least the first and second target areas of the substrate, corresponding to first and second devices to be formed adjacent to each other on the substrate, and a third target area located between the first and second regions.

26. The lithographic apparatus of claim 25, wherein the lithographic apparatus is configured such that the exposure unit exposes the parallel lines on the entire substrate.

27. The lithographic apparatus of claim 25, further comprising:

a second exposure unit configured to expose a pattern of radiation on the substrate, wherein at least a part of the pattern is used to expose substantially the entire third region.

28. The lithographic apparatus of claim 27, wherein the second exposure unit comprises an array of individually controllable elements that is used to modulate a beam of radiation that is projected onto the substrate in order to expose the pattern of radiation on the substrate.

29. The lithographic apparatus of claim 1, further comprising:

a second exposure unit comprising a patterning device that is configured to modulate a beam of radiation and a projection system that is configured to project the modulated beam of radiation onto the substrate in order to expose a pattern of radiation on the substrate.

30. The lithographic apparatus of claim 29, wherein the patterning device comprises an array of individually controllable elements that is used to modulate a beam of radiation that is projected onto the substrate in order to expose the pattern of radiation on the substrate.

31. The lithographic apparatus of claim 1, wherein each of the first and second target areas overlap by less than half.

32. A device manufacturing method, comprising:

using an exposure unit to project two beams of pulsed radiation onto a substrate, such that each of the two beams interfere with each other to produce a series of separate exposures comprising a first exposure during a first exposure period and a second exposure during a second exposure period, the first and second exposure periods being successive, to expose a first set of parallel lines whereby a first target area is exposed during the first exposure period and a second target area is exposed during the second exposure period on the substrate during each pass across the substrate, each of the first and second target areas being an area smaller than a width of the substrate supported on a substrate support; and

continuously moving the substrate support relative to the exposure unit, while the parallel lines are exposed on the first and second target areas on the substrate by the exposure unit,

wherein during a third exposure period to expose a second set of parallel lines, only one of the second set of parallel lines overlaps and aligns with only one of the parallel lines of the first set of parallel lines.

33. A flat panel display manufactured according to the method of claim 32.

34. An integrated circuit device manufactured according to the method of claim 32.