Oxide semiconductor target

• US 8,268,194 B2
• Filed: 02/15/2008
• Issued: 09/18/2012
• Est. Priority Date: 02/16/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Chang-jung, Lee, Je-hun
• Primary Examiner(s): Nguyen, Khanh Tuan
• Application Number:
  US12/071,097
• Publication Number:
  US 20080206923A1
• Time in Patent Office: 1,677 Days
• Field of Search: 252/500, 313/506, 428/432, 428/697
• US Class Current: 252/500
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method of forming an oxide semiconductor layer includes: mounting an oxide semiconductor target in a chamber; loading a substrate into the chamber; vacuuming the chamber; applying a direct current power to the oxide semiconductor target while injecting oxygen and a sputtering gas into the chamber; and forming an oxide semiconductor layer on a surface of the substrate by applying plasma of the sputtering gas onto the oxide semiconductor target. Here, the oxide semiconductor target has a resistance of 1 kΩ or less.

Claims

1. An oxide semiconductor target having a resistance that is less than or equal to 1 kΩ

, wherein the oxide semiconductor target has a composition of x(HfO₂).y(In₂O₃).z(ZnO), wherein x, y, z are molar ratios, and wherein 0<

x<

1, y≧

0.15, and z≧

0.15.

2. The target of claim 1, wherein a molar ratio of HfO₂:

In₂O₃;

ZnO is 0.1;

1;

2, 0.2;

1;

2, 0.3;

1;

2 or 0.4;

1;

2.

3. An oxide semiconductor target having a resistance that is less than or equal to 1 kΩ

, wherein the oxide semiconductor target has a composition of x(HfO₂).y(In₂O₃).z(ZnO), wherein x, y, z are molar ratios, and,

wherein x, y, and z meet one of the following three sets of conditions;

x+y=1, 0.15≦

x≦

0.85, z=0;

y+z=1, 0.15≦

y≦

0.85, x=0; and

x+z=1, 0.15≦

z, y=0.

4. The oxide semiconductor of claim 3, wherein a molar ratio of HfO₂:

In₂O₃;

ZnO is 0.1;

1;

2, 0.2;

1;

2, 0.3;

1;

2 or 0.4;

1;

2.