Methods of forming patterns on substrates

• US 8,268,543 B2
• Filed: 03/23/2009
• Issued: 09/18/2012
• Est. Priority Date: 03/23/2009
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sills, Scott, Sandhu, Gurtej S.
• Primary Examiner(s): Duda, Kathleen
• Assistant Examiner(s): RAYMOND, BRITTANY L
• Application Number:
  US12/409,308
• Publication Number:
  US 20100239983A1
• Time in Patent Office: 1,275 Days
• Field of Search: 430/311, 430/322, 430/323
• US Class Current: 430/322
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Abstract

A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.

Claims

1. A method of forming a pattern on a substrate, comprising:

forming spaced first features over a substrate, the spaced first features comprising opposing lateral sidewalls;

forming material onto the opposing lateral sidewalls of the spaced first features, that portion of the material received against each of the opposing lateral sidewalls being of different composition from composition of each of the opposing lateral sidewalls; and

densifying at least one of said portion of the material and the spaced first features to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and said portion of the material.

2. The method of claim 1 wherein at least one of the spaced first features and the material comprises photoresist.

3. The method of claim 1 wherein both of the spaced first features and the material comprise photoresist.

4. The method of claim 1 wherein neither of the spaced first features or the material comprises photoresist.

5. The method of claim 1 wherein the densifying and the move are of only the one.

6. The method of claim 5 wherein the densifying and the move are of the spaced first features.

7. The method of claim 5 wherein the densifying and the move are of the material.

8. The method of claim 5 wherein the other expands to reduce its density and move toward the one.

9. The method of claim 1 wherein the densifying and the move are of both the one and the other.

10. The method of claim 1 wherein the densifying comprises heating.

11. The method of claim 10 wherein the densifying is in the absence of etching.

12. The method of claim 1 wherein the densifying comprises actinically irradiating.

13. The method of claim 1 wherein the void space upon initial formation is sealed elevationally outward by the material in cross section.

14. The method of claim 13 comprising removing some of the material to open the void space elevationally outward after its initial formation and form disconnected spaced second features which are spaced from and alternate with the spaced first features.

15. The method of claim 1 wherein the void space upon initial formation is open elevationally outward in cross section.

16. The method of claim 1 wherein the material is received over elevationally outermost surfaces of the spaced first features during said densifying.

17. The method of claim 1 wherein none of the material is received over elevationally outermost surfaces of the spaced first features during said densifying.

18. The method of claim 1 wherein no material is received over elevationally outermost surfaces of the spaced first features during said densifying.

19. The method of claim 1 comprising after the densifying, processing the substrate through a mask pattern comprising the spaced first features and the material.

20. The method of claim 1 comprising:

after the densifying, forming spaced spacers over lateral sidewalls of the material and over the opposing lateral sidewalls of the first features;

removing the material and the first features from the substrate selectively relative to the spaced spacers; and

after the removing, processing the substrate through a mask pattern comprising the spaced spacers.

21. A method of forming a pattern on a substrate, comprising:

forming spaced first features over a substrate, the spaced first features comprising opposing lateral sidewalls and a top wall;

forming material onto the opposing lateral sidewalls and the top wall of the spaced first features, that portion of the material received against each of the opposing lateral sidewalls and the top wall being of different composition from composition of each of the opposing lateral sidewalls and the top wall; and

treating the substrate to form an upside-down generally U-shaped void space about each of the spaced first features in at least one cross section.

22. The method of claim 21 comprising removing a base of the upside-down generally U-shaped void space to form disconnected spaced second features which are spaced from and alternate with the spaced first features.

23. The method of claim 22 comprising laterally trimming the disconnected spaced second features to reduce their respective widths.

24. The method of claim 22 comprising laterally trimming the spaced first features after the removing to reduce their respective widths.

25. A method of forming a pattern on a substrate, comprising:

forming spaced first features over a substrate, the spaced first features comprising opposing lateral sidewalls which are generally parallel one another;

forming material onto the opposing lateral sidewalls of the spaced first features, that portion of the material received against each of the opposing lateral sidewalls being of different composition from composition of each of the opposing lateral sidewalls; and

forming spaced second features over the substrate which comprise the material and which are spaced from and received between the spaced first features, the forming of said spaced second features comprising densifying at least one of said portion of the material and the spaced first features to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and said portion of the material.

26. The method of claim 25 wherein the spaced first features are homogenous.

27. The method of claim 25 comprising forming the material over elevationally outermost surfaces of the spaced first features.

28. The method of claim 27 wherein the material is received over the elevationally outermost surfaces of the spaced first features during said densifying.

29. The method of claim 27 comprising removing the material from being received over the elevationally outermost surfaces of the spaced first features prior to said densifying.

30. The method of claim 27 comprising after forming the spaced second features, laterally trimming the spaced first features to reduce their respective widths.

31. The method of claim 27 comprising after completing the densifying, laterally trimming the spaced second features to reduce their respective widths.

32. The method of claim 27 comprising:

after forming the spaced second features, laterally trimming the spaced first features to reduce their respective widths; and

after completing the densifying, laterally trimming the spaced second features to reduce their respective widths.

33. The method of claim 32 comprising laterally trimming the spaced second features after laterally trimming the spaced first features.

34. The method of claim 32 comprising laterally trimming the spaced second features before laterally trimming the spaced first features.

35. The method of claim 32 comprising laterally trimming the spaced first and second features at the same time.