Group III-nitrides on SI substrates using a nanostructured interlayer

• US 8,268,646 B2
• Filed: 10/24/2008
• Issued: 09/18/2012
• Est. Priority Date: 08/31/2005
• Status: Expired due to Fees

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Kryliouk, Olga, Park, Hyun Jong, Anderson, Timothy J.
• Primary Examiner(s): Gebremariam, Samuel
• Application Number:
  US12/257,567
• Publication Number:
  US 20100029064A1
• Time in Patent Office: 1,425 Days
• Field of Search: 438/22, 438/20, 438/48
• US Class Current: 438/20
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured In_xGa_1-xN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.

Claims

1. A method for forming highly textured group III-nitride layers, comprising the steps of:

providing a single crystal silicon comprising substrate;

depositing a nanostructured In_xGa_1-xN (1≧

x≧

0) interlayer on said silicon substrate, the nanostructured In_xGa_1-xN interlayer being directly disposed on the silicon substrate and being in contact with said silicon substrate;

a surface of the substrate that contacts the nanostructured interlayer being flat; and

depositing a highly textured group III-nitride layer on said interlayer, wherein said interlayer has a nano indentation hardness that is less than both said silicon substrate and said highly textured group III-nitride layer;

wherein said interlayer comprises a columnar film or nanorods having average rod diameters of 300 to 700 nm.

2. The method of claim 1, wherein said step of depositing a highly textured group III-nitride layer comprises a first group III-nitride layer deposition at a first temperature followed by a second group III-nitride layer deposition at a second temperature, wherein said first temperature is below a decomposition temperature of said In_xGa_1-xN and said second temperature is at least 150°

C. greater than said first temperature.

3. The method of claim 1, wherein said highly textured group III nitride layer is crack free and has a thickness of at least 10 μ

m.

4. The method of claim 1, wherein said silicon substrate is (111) oriented.

5. The method of claim 1, wherein said highly textured group III-nitride layer comprises GaN.

6. The method of claim 1, wherein x=1, said interlayer being InN.

7. The method of claim 1, wherein said interlayer comprises randomly oriented nanorods.

8. The method of claim 1, wherein said interlayer comprises a plurality of nanorods aligned with one another.

9. A method for forming highly textured group III-nitride layers, comprising the steps of:

providing a single crystal silicon comprising substrate;

depositing a nanostructured In_xGa_1-xN (1≧

x≧

0) interlayer on said silicon substrate, the nanostructured In_xGa_1-xN interlayer being directly disposed on the silicon substrate and being in contact with said silicon substrate;

a surface of the substrate that contacts the nanostructured interlayer being smooth; and

depositing a highly textured group III-nitride layer on said interlayer, wherein said interlayer has a nano indentation hardness that is less than both said silicon substrate and said highly textured group III-nitride layer;

wherein said interlayer comprises a columnar film or nanorods.

10. The method of claim 9, wherein said step of depositing a highly textured group III-nitride layer comprises a first group III-nitride layer deposition at a first temperature followed by a second group III-nitride layer deposition at a second temperature, wherein said first temperature is below a decomposition temperature of said In_xGa_1-xN and said second temperature is at least 150°

C. greater than said first temperature.

11. The method of claim 9, wherein said highly textured group III nitride layer is crack free and has a thickness of at least 10 μ

m.

12. The method of claim 9, wherein said highly textured group III-nitride layer comprises GaN.

13. The method of claim 9, wherein x=1, said interlayer being InN.

14. The method of claim 9, wherein said interlayer comprises randomly oriented nanorods.

15. The method of claim 9, wherein said interlayer comprises a plurality of nanorods aligned with one another.