Silicon based solid state lighting
First Claim
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1. A method comprising:
- forming a trench on a silicon semiconductor substrate, the substrate having a first surface along the (100) crystal plane and the trench having a second surface that is not parallel with the first surface of the substrate, the second surface formed along the (111) crystal plane;
forming a buffer layer on, conforming with and parallel with a substantial portion of the second surface while leaving the first surface along the (100) crystal plane substantially free of buffer material;
forming a first III-V compound layer on, conforming with and parallel with a substantial portion of the buffer layer;
forming a quantum-well layer on, conforming with and parallel with a substantial portion of the first III-V compound layer, wherein the quantum-well layer is configured to emit light when an electric current is produced in the quantum-well layer; and
forming a second III-V compound layer on, conforming with and parallel with at least a substantial portion of the quantum-well layer.
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Abstract
A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers.
52 Citations
5 Claims
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1. A method comprising:
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forming a trench on a silicon semiconductor substrate, the substrate having a first surface along the (100) crystal plane and the trench having a second surface that is not parallel with the first surface of the substrate, the second surface formed along the (111) crystal plane; forming a buffer layer on, conforming with and parallel with a substantial portion of the second surface while leaving the first surface along the (100) crystal plane substantially free of buffer material; forming a first III-V compound layer on, conforming with and parallel with a substantial portion of the buffer layer; forming a quantum-well layer on, conforming with and parallel with a substantial portion of the first III-V compound layer, wherein the quantum-well layer is configured to emit light when an electric current is produced in the quantum-well layer; and forming a second III-V compound layer on, conforming with and parallel with at least a substantial portion of the quantum-well layer. - View Dependent Claims (2, 3, 4, 5)
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Specification