Field-effect transistor and method for fabricating field-effect transistor
First Claim
Patent Images
1. A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the method comprising:
- a deposition step of depositing an oxide film containing In2MgO4;
a patterning step of patterning the oxide film by processes including etching to obtain an active layer having an oxide semiconductor containing In2MgO4; and
a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
-
Citations
10 Claims
-
1. A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the method comprising:
-
a deposition step of depositing an oxide film containing In2MgO4; a patterning step of patterning the oxide film by processes including etching to obtain an active layer having an oxide semiconductor containing In2MgO4; and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium, the method comprising:
-
a deposition step of depositing an oxide film; a patterning step of patterning the oxide film by processes including etching to obtain the active layer; and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step, wherein in the deposition stei the oxide film containing In2MgO4 is deposited, and wherein in the deposition step, at least one of aluminum (Al) and gallium (Ga) is substituted for part of indium (In) and at least one of calcium (Ca), strontium (Sr) and barium (Ba) is substituted for part of magnesium (Mg) in the oxide film containing In2Mga4.
-
-
10. A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium, the method comprising:
-
a deposition step of depositing an oxide film; a patterning step of patterning the oxide film by processes including etching to obtain the active layer; and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step, wherein in the deposition step, at least one of nitrogen and fluorine is substituted for part of oxygen in the oxide film containing In2MgO4.
-
Specification