IC card and booking-account system using the IC card

• US 8,268,702 B2
• Filed: 03/08/2012
• Issued: 09/18/2012
• Est. Priority Date: 12/27/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Goto, Yuugo, Ohno, Yumiko, Akiba, Mai
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US13/415,043
• Publication Number:
  US 20120171788A1
• Time in Patent Office: 194 Days
• Field of Search: 438/455, 438/458, 438/459
• US Class Current: 438/458
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06Q 20/105 involving programming of a portable memory device, e.g. IC cards, "electronic purses"
• CPC Class Codes: G06Q 20/3415 Cards acting autonomously as pay-media
• CPC Class Codes: G07F 7/1008 Active credit-cards provided with means to personalise their use, e.g. with PIN-introduction/comparison system
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10271 Silicon-germanium [SiGe]
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Claims

1. A method for manufacturing an article comprising:

forming a metal film over a first substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming a semiconductor element over the base film;

separating the semiconductor element and the base film from the first substrate; and

after separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.

2. The method for manufacturing the article according to claim 1, wherein the metal film comprises tungsten.

3. The method for manufacturing the article according to claim 1, wherein the oxide film is formed without being exposed to air after the metal film is formed.

4. The method for manufacturing the article according to claim 1, wherein a step of separating is performed by physical means.

5. The method for manufacturing the article according to claim 1, wherein the first substrate is a glass substrate.

6. The method for manufacturing the article according to claim 1, wherein the plastic substrate comprises polyimide.

7. The method for manufacturing the article according to claim 1, wherein the second substrate is a printed wiring board.

8. The method for manufacturing the article according to claim 1, wherein the article comprises a microprocessor, a memory, or a power source circuit.

9. A method for manufacturing an article comprising:

forming a metal film over a first substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming a display device and a semiconductor element over the base film;

separating the display device, the semiconductor element, and the base film from the first substrate; and

after separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.

10. The method for manufacturing the article according to claim 9, wherein the metal film comprises tungsten.

11. The method for manufacturing the article according to claim 9, wherein the oxide film is formed without being exposed to air after the metal film is formed.

12. The method for manufacturing the article according to claim 9, wherein a step of separating is performed by physical means.

13. The method for manufacturing the article according to claim 9, wherein the first substrate is a glass substrate.

14. The method for manufacturing the article according to claim 9, wherein the plastic substrate comprises polyimide.

15. The method for manufacturing the article according to claim 9, wherein the display device is a light emitting device.

16. A method for manufacturing an article comprising:

forming a metal film over a first substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming a semiconductor element comprising a polycrystalline semiconductor over the base film;

separating the semiconductor element and the base film from the first substrate; and

after separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.

17. The method for manufacturing the article according to claim 16, wherein the metal film comprises tungsten.

18. The method for manufacturing the article according to claim 16, wherein the oxide film is formed without being exposed to air after the metal film is formed.

19. The method for manufacturing the article according to claim 16, wherein a step of separating the semiconductor element is performed by physical means.

20. The method for manufacturing the article according to claim 16, wherein the first substrate is a glass substrate.

21. The method for manufacturing the article according to claim 16, wherein the plastic substrate comprises polyimide.

22. The method for manufacturing the article according to claim 16, wherein the second substrate is a printed wiring board.

23. The method for manufacturing the article according to claim 16, wherein the article comprises a microprocessor, a memory, or a power source circuit.

24. A method for manufacturing an article comprising:

forming a metal film over a first substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming a display device and a semiconductor element comprising a polycrystalline semiconductor over the base film;

separating the display device, the semiconductor element, and the base film from the first substrate; and

after separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.

25. The method for manufacturing the article according to claim 24, wherein the metal film comprises tungsten.

26. The method for manufacturing the article according to claim 24, wherein the oxide film is formed without being exposed to air after the metal film is formed.

27. The method for manufacturing the article according to claim 24, wherein a step of separating the semiconductor element is performed by physical means.

28. The method for manufacturing the article according to claim 24, wherein the first substrate is a glass substrate.

29. The method for manufacturing the article according to claim 24, wherein the plastic substrate comprises polyimide.

30. The method for manufacturing the article according to claim 24, wherein the display device is a light emitting device.