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Printed TFT and TFT array with self-aligned gate

  • US 8,269,219 B2
  • Filed: 10/25/2011
  • Issued: 09/18/2012
  • Est. Priority Date: 12/19/2007
  • Status: Active Grant
First Claim
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1. A thin film transistor comprisinga gate contact formed from a state-switchable material;

  • a gate dielectric layer formed over the gate contact;

    a source-drain layer including a source contact, and a drain contact formed with a source-drain layer material, wherein any portion of the state-switchable material covered by the source contact and the drain contact is non-conductive and any portion of the state-switchable material not located under the source contact and the drain contact is conductive; and

    a semiconductor material formed between the source contact and the drain contact.

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