Semiconductor light-emitting device

• US 8,269,234 B2
• Filed: 02/22/2010
• Issued: 09/18/2012
• Est. Priority Date: 02/23/2009
• Status: Expired due to Fees

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Cho, Ki Hyun
• Primary Examiner(s): Le, Thao
• Assistant Examiner(s): ZHU, SHENG-BAI
• Application Number:
  US12/709,950
• Publication Number:
  US 20100213478A1
• Time in Patent Office: 939 Days
• Field of Search: 257/94, 257/103, 257/53, 257/72, 257/79, 257/222, 257/225, 257/E27.001, 257/E33.013, 438/24, 438/26, 438/28
• US Class Current: 257/94
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.

Claims

1. A semiconductor light-emitting device, comprising:

a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;

an electrode on the plurality of compound semiconductor layers;

an electrode layer comprising a reflective material under the plurality of compound semiconductor layers;

an oxide or nitride based channel layer around between the electrode layer and the plurality of compound semiconductor layers; and

a conductive support member under the electrode layer,

wherein the conductive support member comprises an alloy material with a thermal expansion coefficient of about 1˜

9×

10<sup>−

6</sup>/K,

wherein the conductive support member is formed of a Ni-alloy layer containing at least one element selected from the group consisting of Cr, Fe, Si, and Mo, and

wherein an inside portion of the channel layer is disposed under the plurality of compound semiconductor layers, and an outside portion of the channel layer has a different thickness from the inside portion of the channel layer and is exposed to an outside of the plurality of compound semiconductor layers.

2. The semiconductor light-emitting device according to claim 1, wherein the plurality of compound semiconductor layers comprise a Group III-V compound semiconductor layer with a thermal expansion coefficient of about 5.25˜

7.75×

10<sup>−

6</sup>/K.

3. The semiconductor light-emitting device according to claim 1, comprising an ohmic layer forming an ohmic contact between the electrode layer and the second conductivity type semiconductor layer.

4. The semiconductor light-emitting device according to claim 1, wherein the electrode layer comprises at least one of Ag, Ag alloy, Ni, Al, Al alloy, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO_x, RuO_x, RuO_x/ITO, Ni/IrO_x/Au and Ni/IrO_x/Au/ITO.

5. The semiconductor light-emitting device according to claim 1, wherein the conductive support member comprises at least one of Ni—

Fe based alloy, Ni—

Mo based alloy, Ni—

Mo—

Cr based alloy, Ni—

Cr based alloy, Ni—

Cr—

Fe based alloy, and Ni—

Si based alloy.

6. The semiconductor light-emitting device according to claim 1, wherein the conductive support member has a thickness of 30 μ

m-300 μ

m.

7. The semiconductor light-emitting device according to claim 1, wherein the plurality of compound semiconductor layers comprise:

a first conductivity type semiconductor layer with an electrode;

an active layer under the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer under the active layer.

8. The semiconductor light-emitting device according to claim 1, wherein the plurality of compound semiconductor layers comprise a Group III-V compound semiconductor material.

9. The semiconductor light-emitting device according to claim 1, wherein the conductive support member is formed in a single layer.

10. The semiconductor light-emitting device according to claim 1, wherein the conductive support member comprises an alloy having a thermal expansion coefficient difference within about 50% with respect to the plurality of compound semiconductor layers.