Semiconductor light emitting device

• US 8,269,250 B2
• Filed: 02/12/2010
• Issued: 09/18/2012
• Est. Priority Date: 02/16/2009
• Status: Expired due to Fees

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): Chen, Yu
• Application Number:
  US12/705,130
• Publication Number:
  US 20100207159A1
• Time in Patent Office: 949 Days
• Field of Search: 257/81, 257/99, 257/100, 257/E33.059, 257/E33.06, 257/E33.064, 257/E33.062
• US Class Current: 257/99
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer.

Claims

1. A semiconductor light emitting device, comprising:

a light emitting structure including a plurality of compound semiconductor layers;

a second electrode layer formed under the light emitting structure;

an isolation layer provided under the light emitting structure and at an outer portion of the second electrode layer;

a metallic layer provided on the isolation layer while being spaced apart from an outer portion of the light emitting structure; and

an insulating layer formed at outer portions of the metallic layer and the light emitting structure,

wherein the isolation layer extends from the bottom surface of the light emitting structure to a bottom surface of the metallic layer, and

wherein the insulating layer is provided on the isolation layer and between the metallic layer and the light emitting structure.

2. The semiconductor light emitting device of claim 1, wherein the isolation layer comprises at least one selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO₂, SIO_x, SiO_xN_y, Si₃N₄, Al₂O₃, and TiO₂.

3. The semiconductor light emitting device of claim 1, wherein the metallic layer comprises one metal selected from the group consisting of Mo, Ni, Cu, Cr, Fe, and Co, or alloy of at least two above metals.

4. The semiconductor light emitting device of claim 1, wherein the insulating layer comprises at least one selected from the group consisting of SiO₂, SiO_x, SiO_xN_y, Si₃N₄, Al₂O₃, and TiO₂.

5. The semiconductor light emitting device of claim 1, further comprising a conductive support member provided under the second electrode layer and the isolation layer.

6. The semiconductor light emitting device of claim 1, wherein the light emitting structure comprises group III-V compound semiconductors, and wherein the light emitting structure comprises a first conductive semiconductor layer connected to a first electrode, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer provided between the active layer and the second electrode layer and provided between the active layer and the isolation layer.