Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR
First Claim
1. A semiconductor device, comprising:
- a substrate; and
a balun formed over the substrate, the balun including,(a) a first conductive trace wound in a coil to exhibit inductive properties comprising a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device,(b) a first capacitor coupled between the first and second ends of the first conductive trace,(c) a second conductive trace wound in a coil to exhibit inductive properties comprising a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the first conductive trace being formed completely within the second conductive trace and separated from the second conductive trace by a distance to reduce inductive and capacitive coupling, and(d) a second capacitor coupled between the first and second ends of the second conductive trace.
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Accused Products
Abstract
A semiconductor device has an RF balun formed over a substrate. The RF balun includes a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device. A first capacitor is coupled between the first and second ends of the first conductive trace. A second conductive trace is wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device. The first conductive trace is formed completely within the second conductive trace. The first conductive trace and second conductive trace can have an oval, circular, or polygonal shape separated by 50 micrometers. A second capacitor is coupled between the first and second ends of the second conductive trace.
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Citations
25 Claims
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1. A semiconductor device, comprising:
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a substrate; and a balun formed over the substrate, the balun including, (a) a first conductive trace wound in a coil to exhibit inductive properties comprising a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device, (b) a first capacitor coupled between the first and second ends of the first conductive trace, (c) a second conductive trace wound in a coil to exhibit inductive properties comprising a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the first conductive trace being formed completely within the second conductive trace and separated from the second conductive trace by a distance to reduce inductive and capacitive coupling, and (d) a second capacitor coupled between the first and second ends of the second conductive trace. - View Dependent Claims (3, 5)
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2. A semiconductor device, comprising:
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a substrate; and a balun formed over the substrate, the balun including, (a) a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device, (b) a first capacitor coupled between the first and second ends of the first conductive trace, (c) a second conductive trace wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the first conductive trace being formed completely within the second conductive trace, wherein the first conductive trace and second conductive trace are separated by 50 micrometers.
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4. A semiconductor device, comprising:
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a substrate; and a balun formed over the substrate, the balun including, (a) a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device, (b) a first capacitor coupled between the first and second ends of the first conductive trace, (c) a second conductive trace wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the first conductive trace being formed completely within the second conductive trace, wherein the first conductive trace and second conductive trace have a coupling coefficient between 0.2 and 0.45.
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6. A semiconductor device, comprising:
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a substrate; an inner conductive trace formed over the substrate and wound to exhibit inductive properties including a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device; and an outer conductive trace formed over the substrate and wound to exhibit inductive properties including a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the inner conductive trace being formed within the outer conductive trace and separated from the outer conductive trace by a distance to reduce capacitive and inductive coupling. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A semiconductor device, comprising:
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a substrate; a first inductor formed on the substrate; and a second inductor formed on the substrate, the first inductor being formed within the second inductor and separated from the second inductor by a distance to reduce capacitive coupling. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a semiconductor device, comprising:
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providing a substrate; forming an inner conductive trace over the substrate and wound to exhibit inductive properties including a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device; and forming an outer conductive trace over the substrate and wound to exhibit inductive properties including a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device, the inner conductive trace being formed within the outer conductive trace and separated from the outer conductive trace by a distance to reduce capacitive and inductive coupling. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification