Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same
First Claim
1. An electrostatic discharge (ESD) protection element comprising:
- a collector area having a first conductivity type;
a first barrier area bordering on the collector area, the first barrier area having a second conductivity type;
a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or a semiconductor area having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area;
a second barrier area bordering on the semiconductor area, the second barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and
an emitter area bordering on the second barrier area, the emitter area having the first conductivity type;
a third barrier area bordering on the semiconductor area, the third barrier area having the first conductivity type and a higher dopant concentration than the semiconductor area; and
a base area bordering on the third barrier area, the base area having the second conductivity type,wherein the dopant concentration of the third barrier area is such that the third barrier area is more than 95% or fully depleted of charge carriers of the first conductivity type when no voltage is applied to the electrostatic discharge protection element,wherein the dopant concentrations of the first barrier area and of the second barrier area are such that the first barrier area and the second barrier area are more than 95% depleted of charge carriers of the second conductivity type when no voltage is applied to the electrostatic discharge protection element; and
wherein the base area is connected to the emitter area via an electrical connection line.
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Accused Products
Abstract
An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
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Citations
16 Claims
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1. An electrostatic discharge (ESD) protection element comprising:
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a collector area having a first conductivity type; a first barrier area bordering on the collector area, the first barrier area having a second conductivity type; a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or a semiconductor area having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area; a second barrier area bordering on the semiconductor area, the second barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and an emitter area bordering on the second barrier area, the emitter area having the first conductivity type; a third barrier area bordering on the semiconductor area, the third barrier area having the first conductivity type and a higher dopant concentration than the semiconductor area; and a base area bordering on the third barrier area, the base area having the second conductivity type, wherein the dopant concentration of the third barrier area is such that the third barrier area is more than 95% or fully depleted of charge carriers of the first conductivity type when no voltage is applied to the electrostatic discharge protection element, wherein the dopant concentrations of the first barrier area and of the second barrier area are such that the first barrier area and the second barrier area are more than 95% depleted of charge carriers of the second conductivity type when no voltage is applied to the electrostatic discharge protection element; and wherein the base area is connected to the emitter area via an electrical connection line. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electrostatic discharge (ESD) protection element comprising:
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a collector area having a first conductivity type; a first barrier area bordering on the collector area, the first barrier area having a second conductivity type; a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or a semiconductor area having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area; a second barrier area bordering on the semiconductor area, the second barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and an emitter area bordering on the second barrier area, the emitter area having the first conductivity type; wherein the dopant concentrations of the first barrier area and of the second barrier area are such that the first barrier area and the second barrier area are more than 95% depleted of charge carriers of the second conductivity type when no voltage is applied to the electrostatic discharge protection element; wherein the semiconductor area is an epitaxy layer bordering on a substrate layer, the substrate layer having the first or second conductivity type and a dopant concentration that is higher than the dopant concentration of the epitaxy layer; wherein the electrostatic discharge protection element further comprises a barrier layer arranged between the epitaxy layer and the substrate layer, the barrier layer having the first conductivity type and a higher dopant concentration than the semiconductor area; and wherein the dopant concentration of the barrier layer is such that the barrier layer is depleted more than 95% or fully depleted when no voltage is applied to the electrostatic discharge protection element.
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8. A passive chip comprising:
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a ground contact to connect the chip with an external ground voltage; a data line contact to connect the chip with an external data line; and an electrostatic discharge (ESD) protection element, the electrostatic discharge protection element comprising a collector area having a first conductivity type; a first barrier area bordering on the collector area, the first barrier area having a second conductivity type; a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area; a second barrier area bordering on the semiconductor area, the second barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and an emitter area bordering on the second barrier area, the emitter area having the first conductivity type, wherein the dopant concentration of the first barrier area and of the second barrier area are such that the first barrier area and the second barrier area are more than 95% depleted or fully depleted of charge carriers of the second conductivity type, when no voltage is applied to the electrostatic discharge protection element; and wherein the ground contact is connected to the emitter area and the data line contact is connected to the collector area. - View Dependent Claims (9, 10, 11)
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12. An electrostatic discharge protection element comprising a diode structure, the diode structure comprising:
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a cathode area having a first conductivity type; a first barrier area bordering on the cathode area, the first barrier area having a second conductivity type, that differs from the first conductivity type; a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area; a second barrier area bordering on the semiconductor area, the second barrier area having the first conductivity type and a higher dopant concentration than the semiconductor area; and an anode area bordering on the second barrier area, the anode area having the second conductivity type, wherein the dopant concentration of the first barrier area and the dopant concentration of the second barrier area are such that the first barrier area and the second barrier are more than 95% or fully depleted when no bias voltage is applied to the diode structure; wherein the electrostatic discharge protection element comprises a further diode structure, the further diode structure comprising; a further cathode area having the first conductivity type; a further first barrier area bordering on the further cathode area, the further first barrier area having the second conductivity type; a further semiconductor area bordering on the further first barrier area, the further semiconductor area being an intrinsic semiconductor area, or having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the further first barrier area; a further second barrier area bordering on the further semiconductor area, the further second barrier area having the first conductivity type and a higher dopant concentration than the further semiconductor area; and a further anode area bordering on the further second barrier area, the further anode area having the second conductivity type, wherein both the cathode area and the further anode area are connected to a data line contact of the electrostatic discharge protection element and wherein both the anode area and the further cathode area are connected to a ground contact of the electrostatic discharge protection element. - View Dependent Claims (13)
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14. A method of producing an electrostatic discharge (ESD) protection element on a passive chip, the method comprising:
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forming in a semiconductor substrate a collector area having a first conductivity type; forming in the semiconductor substrate a first barrier area bordering on the collector area, the first barrier area having a second conductivity type; forming in the semiconductor substrate a semiconductor area bordering on the first barrier area, the semiconductor area being an intrinsic semiconductor area, or a semiconductor area having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the first barrier area; forming in the semiconductor substrate a second barrier area bordering on the semiconductor area, the second barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and forming in the semiconductor substrate an emitter area bordering on the second barrier area, the emitter area having the first conductivity type; forming a ground contact at the semiconductor substrate for connecting the chip with an external ground voltage, wherein the ground contact is electrically connected with the emitter area; and forming a data line contact at the semiconductor substrate for connecting the chip with an external data line, wherein the data line contact is electrically connected with the collector area; wherein the dopant concentration of the first barrier area and of the second barrier area are such that the first barrier area and the second barrier area are more than 95% or fully depleted of charge carriers of the second conductivity type, when no voltage is applied to the electrostatic discharge protection element. - View Dependent Claims (15)
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16. An electrostatic discharge (ESD) protection element comprising:
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a collector area having a first conductivity type; an emitter area having the first conductivity type; a barrier area having a second conductivity type; and a semiconductor area being an intrinsic semiconductor area, or a semiconductor area having the first or second conductivity type and a dopant concentration that is lower than a dopant concentration of the barrier area, wherein the dopant concentrations of the barrier area and the semiconductor area are such that the barrier area is about 20-80% depleted of charge carriers of the second conductivity type when no voltage is applied to the electrostatic discharge protection element, and wherein the barrier area borders on the emitter area, and the semiconductor area borders on the collector area and the barrier area, or wherein the barrier area borders on the collector area, and the semiconductor area borders on the emitter area and the barrier area.
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Specification