Silicon polishing compositions with high rate and low defectivity
First Claim
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1. A chemical-mechanical polishing composition consisting essentially of:
- (a) silica,(b) one or more organic carboxylic acids, salts, or hydrates thereof selected from the group consisting of (i) dicarboxylic acids of the formula;
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Abstract
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.
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Citations
59 Claims
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1. A chemical-mechanical polishing composition consisting essentially of:
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(a) silica, (b) one or more organic carboxylic acids, salts, or hydrates thereof selected from the group consisting of (i) dicarboxylic acids of the formula; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of chemically-mechanically polishing a substrate comprising:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition consisting essentially of; (a) silica, (b) one or more organic carboxylic acids or salts thereof selected from the group consisting of (i) dicarboxylic acids of the formula; - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
Specification