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Methods of depositing a ruthenium film

  • US 8,273,408 B2
  • Filed: 10/14/2008
  • Issued: 09/25/2012
  • Est. Priority Date: 10/17/2007
  • Status: Active Grant
First Claim
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1. A method of depositing a ruthenium film, the method comprising:

  • loading a substrate into a reactor;

    conducting a plurality of first and second deposition cycles, at least one of the first deposition cycles comprising steps of;

    supplying a ruthenium precursor to the reactor;

    supplying oxygen (O2) gas to the reactor, wherein supplying the oxygen gas comprises supplying the oxygen gas simultaneously with supplying the ruthenium precursor; and

    supplying ammonia (NH3) gas to the reactor after supplying the ruthenium precursor and the oxygen gas without supplying the ruthenium precursor and the oxygen gas;

    after the at least one of the first deposition cycles, conducting one or more second deposition cycles, wherein at least one of the second cycles comprises steps of;

    supplying the ruthenium precursor the reactor; and

    supplying oxygen gas to the reactor after supplying the ruthenium precursor, wherein ammonia gas is not supplied in the second cycles; and

    supplying ammonia gas to the reactor subsequent to the one or more second cycles;

    wherein the temperature of the reactor is maintained at about 200°

    C. to about 400°

    C.

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