Method for production of a radiation-emitting semiconductor chip

• US 8,273,593 B2
• Filed: 02/15/2011
• Issued: 09/25/2012
• Est. Priority Date: 04/29/2004
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Kaiser, Stephan, Härle, Volker
• Primary Examiner(s): PARENDO, KEVIN A
• Application Number:
  US13/027,810
• Publication Number:
  US 20110140141A1
• Time in Patent Office: 588 Days
• Field of Search: 438/47, 438/458, 257/E21.122
• US Class Current: 438/47
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

Claims

1. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip comprising the steps of:

(a) growing the semiconductor layer sequence on a substrate;

(b) forming or applying a mirror layer on the semiconductor layer sequence on a surface opposite to the substrate, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer;

(c) separating the semiconductor layer sequence from the substrate, wherein a separation zone made of compound semiconductor material of the semiconductor layer sequence is at least partly decomposed, and

(d) etching a separation surface of the semiconductor layer sequence, from which the substrate has been separated and on which different crystal facets have been uncovered, by means of an etchant which predominantly etches at crystal defects and selectively etches the different crystal facets at the separation surface;

wherein through the etching at the separation surface of the semiconductor layer sequence a roughening is produced on a scale which corresponds to a wavelength range of an electromagnetic radiation emitted by the semiconductor layer sequence during operation thereof.

2. The method as claimed in claim 1, wherein in step (d) the etchant contains KOH.

3. The method as claimed in claim 1, wherein in step (d) the etchant contains a corrosive gas.

4. The method as claimed in claim 1, wherein the semiconductor layer sequence is a radiation-emitting semiconductor layer sequence based on a nitride compound semiconductor material, and wherein in step (c) the nitride compound semiconductor material of the semiconductor layer sequence is decomposed in the separation zone such that gaseous nitrogen arises.

5. The method as claimed in claim 1, wherein the lift-off method is a laser lift-off method.

6. The method as claimed in claim 1, wherein the semiconductor layer sequence has at the separation surface an increased defect density in comparison with a part of the semiconductor layer sequence that is disposed further than the separation surface from the substrate.

7. The method as claimed in claim 1, wherein the semiconductor layer sequence contains at least one material from the system In_xAl_yGa_1-x-yN where 0≦

x≦

1, 0≦

y≦

1, and x+y ≦

1.

8. The method as claimed in claim 1, wherein the semiconductor layer sequence has a dopant concentration of between 1*10¹⁸ cm⁻

3 and 1*10²⁰ cm<sup>−

3</sup> inclusive at its separation surface.

9. The method as claimed in claim 1, wherein the separation zone contains AlGaN, the Al content of which is chosen in such a way that it is decomposed in step (c), and Al is sintered into the semiconductor layer sequence.

10. The method as claimed in claim 1, wherein the substrate is a sapphire substrate.

11. The method as claimed in claim 1, wherein a contact pad comprising a contact metallization for electrical connection of the semiconductor layer sequence is applied to the separation surface of the semiconductor layer sequence.

12. The method as claimed in claim 1, wherein the semiconductor layer sequence is grown overall from hexagonal GaN-based material on the substrate, wherein the 000-1 crystal face (N face of the hexagonal nitride lattice) faces toward the substrate.

13. The method as claimed in claim 1, wherein a Bragg mirror is applied in step (b).

14. The method as claimed in claim 1, wherein the mirror layer has a reflective layer disposed further from the semiconductor layer sequence than a radiation-transmissive layer.

15. The method as claimed in claim 1, wherein the mirror layer has a reflection layer with a plurality of windows toward the semiconductor layer sequence and a current transport layer that is different from the reflection layer arranged in the windows.