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Structure for flash memory cells

  • US 8,273,625 B2
  • Filed: 04/09/2010
  • Issued: 09/25/2012
  • Est. Priority Date: 04/09/2010
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a semiconductor substrate;

    a first floating gate on the semiconductor substrate, the floating gate having a concave side surface;

    a first control gate on the first floating gate;

    a first spacer adjacent to the first control gate;

    a first word line adjacent a first side of the first floating gate with a first distance; and

    an erase gate adjacent a second side of the first floating gate with a second distance less than the first distance, the second side being opposite the first side,wherein the concave side surface has a tip portion corresponding to a widest part of the floating gate and a recessed portion corresponding to a narrowest part of the floating gate, wherein the tip portion extends to be approximately vertically aligned with an outer surface of the first spacer.

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