Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines
First Claim
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1. A method for manufacturing a semiconductor device, comprising the step of:
- forming a porous low dielectric constant layer for insulation between metal lines,wherein the porous low dielectric constant layer comprises an insulation layer including fillers, and the fillers comprise silicon.
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Abstract
The present invention related to a method for manufacturing a semiconductor device. More particularly, this method describes how to manufacture a semiconductor device having a porous, low dielectric constant layer formed between metal lines, comprising an insulation layer enveloping fillers.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the step of:
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forming a porous low dielectric constant layer for insulation between metal lines, wherein the porous low dielectric constant layer comprises an insulation layer including fillers, and the fillers comprise silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a porous low dielectric constant layer including fillers made of silicon on a semiconductor substrate which is formed with a lower metal line; etching the porous low dielectric constant layer so as to expose the lower metal line and defining a metal line forming region in which an upper metal line is to be formed; and filling a metal layer in the metal line forming region so as to form an upper metal line which comes into contact with the lower metal line. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a semiconductor device, comprising the step of:
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forming a porous low dielectric constant layer having a double-layered structure for insulation between metal lines, wherein the porous low dielectric constant layer comprises an insulation layer including fillers, and wherein the porous low dielectric constant layer having the double-layered structure is formed such that an upwardly positioned layer has a lower dielectric constant than a downwardly positioned layer.
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Specification