Semiconductor device and manufacturing method thereof

• US 8,274,077 B2
• Filed: 08/01/2008
• Issued: 09/25/2012
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Honda, Tatsuya, Sone, Norihito
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US12/184,443
• Publication Number:
  US 20080308806A1
• Time in Patent Office: 1,516 Days
• Field of Search: 257/43, 257/59, 257/E29.202, 257/E29.288, 257/E29.273, 257/E49.004, 257/E31.004
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. An active matrix liquid crystal display device comprising:

a gate electrode over a substrate;

an insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween;

a channel protective film formed over the oxide semiconductor film, the channel protective film having a taper shape;

a source electrode and a drain electrode formed over the oxide semiconductor film and the channel protective film, wherein the source electrode is in contact with a side surface of the oxide semiconductor film and the drain electrode is in contact with a side surface of the oxide semiconductor film;

a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film; and

a pixel electrode formed over the passivation film and electrically connected to one of the source electrode and the drain electrode,

wherein a channel region of the oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

2. The active matrix liquid crystal display device according to claim 1 wherein the passivation film comprises silicon oxide.

3. A television device having the active matrix liquid crystal display device according to claim 1 as a display portion.

4. A computer having the active matrix liquid crystal display device according to claim 1.

5. The active matrix liquid crystal display device according to claim 1, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

6. The active matrix liquid crystal display device according to claim 1,

wherein the insulating film is in contact with the oxide semiconductor film, and

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

7. The active matrix liquid crystal display device according to claim 1,

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

8. The active matrix liquid crystal display device according to claim 1, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

9. The active matrix liquid crystal display device according to claim 1, wherein the channel region of the oxide semiconductor film has crystallinity.

10. The active matrix liquid crystal display device according to claim 1 wherein the oxide semiconductor film has a thickness of 200 nm or less.

11. The active matrix liquid crystal display device according to claim 10, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

12. An active matrix liquid crystal display device comprising:

a scanning line formed over a substrate;

a signal line formed over the substrate across the scanning line;

at least two thin film transistors fowled over the substrate, each of the two thin film transistors comprising an oxide semiconductor film, a channel protective film over the oxide semiconductor film, a source electrode over the oxide semiconductor film and the channel protective film, and a drain electrode over the oxide semiconductor film and the channel protective film; and

a pixel electrode formed over the substrate,

wherein the channel protective film has a taper shape,

wherein the source electrode is in contact with a side surface of the oxide semiconductor film and the drain electrode is in contact with a side surface of the oxide semiconductor film,

wherein the two thin film transistors are electrically connected to the pixel electrode in series, and a gate electrode of each of the two thin film transistors is electrically connected to the scanning line,

wherein a channel region of the oxide semiconductor film has crystallinity and comprises an oxide semiconductor comprising zinc and indium.

13. A television device having the active matrix liquid crystal display device according to claim 12.

14. A computer having the active matrix liquid crystal display device according to claim 12.

15. The active matrix liquid crystal display device according to claim 12, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

16. The active matrix liquid crystal display device according to claim 12, wherein the channel region of the oxide semiconductor film has crystallinity.

17. The active matrix liquid crystal display device according to claim 12 wherein the oxide semiconductor film has a thickness of 200 nm or less.

18. The active matrix liquid crystal display device according to claim 17, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

19. An active matrix liquid crystal display device comprising:

a scanning line formed over a substrate;

a signal line formed over the substrate across the scanning line;

at least two thin film transistors formed over the substrate, each of the two thin film transistors comprising an oxide semiconductor film, a channel protective film over the oxide semiconductor film, a source electrode over the oxide semiconductor film and the channel protective film, and a drain electrode over the oxide semiconductor film and the channel protective film; and

a pixel electrode,

wherein the channel protective film has a taper shape,

wherein the source electrode is in contact with a side surface of the oxide semiconductor film and the drain electrode is in contact with a side surface of the oxide semiconductor film,

wherein a gate electrode of each of the two thin film transistors is electrically connected to the scanning line, and the two thin film transistors are connected between the pixel electrode and the signal line in series, and

wherein a channel region of the oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

20. A television device having the active matrix liquid crystal display device according to claim 19.

21. A computer having the active matrix liquid crystal display device according to claim 19.

22. The active matrix liquid crystal display device according to claim 19, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

23. The active matrix liquid crystal display device according to claim 19, wherein the channel region of the oxide semiconductor film has crystallinity.

24. The active matrix liquid crystal display device according to claim 19 wherein the oxide semiconductor film has a thickness of 200 nm or less.

25. The active matrix liquid crystal display device according to claim 24, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

26. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode;

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of electrodes formed over the first oxide semiconductor film and the channel protective film, wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film, and wherein one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a first driver circuit electrically connected to the first thin film transistor;

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween, and

wherein at least one of a channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

27. The active matrix liquid crystal display device according to claim 26 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based oxide semiconductor.

28. The active matrix liquid crystal display device according to claim 26 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

29. The active matrix liquid crystal display device according to claim 26 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

30. The active matrix liquid crystal display device according to claim 26 wherein the first thin film transistor has a multi-gate structure.

31. A television device having the active matrix liquid crystal display device according to claim 26.

32. A computer having the active matrix liquid crystal display device according to claim 26.

33. The active matrix liquid crystal display device according to claim 26, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), and platinum (Pt), or a nitride of the metal.

34. The active matrix liquid crystal display device according to claim 26,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

35. The active matrix liquid crystal display device according to claim 26,

wherein the passivation film is in contact with the first oxide semiconductor film, and

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

36. The active matrix liquid crystal display device according to claim 26, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

37. The active matrix liquid crystal display device according to claim 26, wherein at least one of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

38. The active matrix liquid crystal display device according to claim 26 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

39. The active matrix liquid crystal display device according to claim 38, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

40. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode;

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of electrodes formed over the first oxide semiconductor film and the channel protective film, wherein one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a scanning line driver circuit electrically connected to the first gate electrode;

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween, and

wherein at least one of a channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film has crystallinity and comprises an oxide semiconductor comprising zinc and indium.

41. The active matrix liquid crystal display device according to claim 40 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based oxide semiconductor.

42. The active matrix liquid crystal display device according to claim 40 wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

43. The active matrix liquid crystal display device according to claim 40 wherein the first thin film transistor has a multi-gate structure.

44. A television device having the active matrix liquid crystal display device according to claim 40.

45. A computer having the active matrix liquid crystal display device according to claim 40.

46. The active matrix liquid crystal display device according to claim 40, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

47. The active matrix liquid crystal display device according to claim 40,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

48. The active matrix liquid crystal display device according to claim 40,

wherein the passivation film is in contact with the first oxide semiconductor film, and

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

49. The active matrix liquid crystal display device according to claim 40, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

50. The active matrix liquid crystal display device according to claim 40, wherein at least one of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

51. The active matrix liquid crystal display device according to claim 40 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

52. The active matrix liquid crystal display device according to claim 51, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

53. An active matrix liquid crystal display device comprising:

a gate electrode over a substrate;

an insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween;

a channel protective film over the oxide semiconductor film, the channel protective film having a taper shape;

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film, wherein one of the pair of transparent conductive oxide films is in contact with a side surface of the oxide semiconductor film and the other one of the pair of transparent conductive oxide films is in contact with a side surface of the oxide semiconductor film;

a source electrode and a drain electrode formed over the pair of transparent conductive oxide films;

a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, and the oxide semiconductor film; and

a pixel electrode formed over the passivation film and electrically connected to one of the source electrode and the drain electrode,

wherein a channel region of the oxide semiconductor film has crystallinity and comprises an oxide semiconductor comprising zinc and indium, and

wherein at least the channel region of the oxide semiconductor film is substantially intrinsic.

54. The active matrix liquid crystal display device according to claim 53 wherein the passivation film comprises silicon oxide.

55. A television device having the active matrix liquid crystal display device according to claim 53 as a display portion.

56. A computer having the active matrix liquid crystal display device according to claim 53.

57. The active matrix liquid crystal display device according to claim 53, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

58. The active matrix liquid crystal display device according to claim 53,

wherein the insulating film is in contact with the oxide semiconductor film, and

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

59. The active matrix liquid crystal display device according to claim 53,

wherein the passivation film is in contact with the oxide semiconductor film, and

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

60. The active matrix liquid crystal display device according to claim 53, wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

61. The active matrix liquid crystal display device according to claim 53, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

62. The active matrix liquid crystal display device according to claim 53, wherein the channel region of the oxide semiconductor film has crystallinity.

63. The active matrix liquid crystal display device according to claim 53 wherein the oxide semiconductor film has a thickness of 200 nm or less.

64. The active matrix liquid crystal display device according to claim 63, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

65. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode;

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of transparent conductive oxide films over the first oxide semiconductor film and the channel protective film, wherein one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film;

a pair of electrodes formed over the pair of transparent conductive oxide films, wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a first driver circuit electrically connected to the first thin film transistor;

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween,

wherein at least a channel region of the first oxide semiconductor film is substantially intrinsic, and

wherein each of the channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

66. The active matrix liquid crystal display device according to claim 65 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

67. The active matrix liquid crystal display device according to claim 65 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

68. A television device having the active matrix liquid crystal display device according to claim 65.

69. A computer having the active matrix liquid crystal display device according to claim 65.

70. The active matrix liquid crystal display device according to claim 65, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

71. The active matrix liquid crystal display device according to claim 65,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

72. The active matrix liquid crystal display device according to claim 65,

wherein the passivation film is in contact with the first oxide semiconductor film, and

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

73. The active matrix liquid crystal display device according to claim 65, wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

74. The active matrix liquid crystal display device according to claim 65, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

75. The active matrix liquid crystal display device according to claim 65, wherein each of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

76. The active matrix liquid crystal display device according to claim 65 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

77. The active matrix liquid crystal display device according to claim 76, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

78. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode;

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of electrodes formed over the first oxide semiconductor film and the channel protective film, wherein one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a scanning line driver circuit electrically connected to the first gate electrode;

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween,

wherein each of the pair of electrodes is in contact with the first oxide semiconductor film,

wherein at least a channel region of the first oxide semiconductor film is substantially intrinsic, and

wherein each of the channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

79. The active matrix liquid crystal display device according to claim 78 wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy foamed on the titanium film.

80. A television device having the active matrix liquid crystal display device according to claim 78.

81. A computer having the active matrix liquid crystal display device according to claim 78.

82. The active matrix liquid crystal display device according to claim 78, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

83. The active matrix liquid crystal display device according to claim 78,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

84. The active matrix liquid crystal display device according to claim 78,

wherein the passivation film is in contact with the first oxide semiconductor film, and

wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

85. The active matrix liquid crystal display device according to claim 78, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

86. The active matrix liquid crystal display device according to claim 78, wherein each of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

87. The active matrix liquid crystal display device according to claim 78 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

88. The active matrix liquid crystal display device according to claim 87, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

89. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film adjacent to the first gate electrode;

a first oxide semiconductor film adjacent to the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of transparent conductive oxide films over the first oxide semiconductor film and the channel protective film, wherein one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film;

a pair of electrodes formed over the pair of transparent conductive oxide films wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode fowled over the passivation film and electrically connected to the first thin film transistor;

a first driver circuit electrically connected to the first thin film transistor;

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film adjacent to the second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with the second insulating film interposed therebetween,

wherein at least one of a channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

90. The active matrix liquid crystal display device according to claim 89 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

91. The active matrix liquid crystal display device according to claim 89 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

92. A television device having the active matrix liquid crystal display device according to claim 89.

93. A computer having the active matrix liquid crystal display device according to claim 89.

94. The active matrix liquid crystal display device according to claim 89, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

95. The active matrix liquid crystal display device according to claim 89,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

96. The active matrix liquid crystal display device according to claim 89, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

97. The active matrix liquid crystal display device according to claim 89, wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

98. The active matrix liquid crystal display device according to claim 89, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

99. The active matrix liquid crystal display device according to claim 89, wherein at least one of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

100. The active matrix liquid crystal display device according to claim 89 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

101. The active matrix liquid crystal display device according to claim 100, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

102. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film adjacent to the first gate electrode; and

a first oxide semiconductor film adjacent to the first gate electrode with the first insulating film interposed therebetween,

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of electrodes formed over the first oxide semiconductor film and the channel protective film, wherein one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a scanning line driver circuit electrically connected to the first gate electrode;

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film adjacent to the second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with the second insulating film interposed therebetween,

wherein at least one of a channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

103. The active matrix liquid crystal display device according to claim 102 wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

104. A television device having the active matrix liquid crystal display device according to claim 102.

105. A computer having the active matrix liquid crystal display device according to claim 102.

106. The active matrix liquid crystal display device according to claim 102, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

107. The active matrix liquid crystal display device according to claim 102,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

108. The active matrix liquid crystal display device according to claim 102, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

109. The active matrix liquid crystal display device according to claim 102, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

110. The active matrix liquid crystal display device according to claim 102, wherein at least one of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

111. The active matrix liquid crystal display device according to claim 102 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

112. The active matrix liquid crystal display device according to claim 111, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

113. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film adjacent to the first gate electrode;

a first oxide semiconductor film adjacent to the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of transparent conductive oxide films over the first oxide semiconductor film and the channel protective film, wherein one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of transparent conductive oxide films is in contact with a side surface of the first oxide semiconductor film;

a pair of electrodes formed over the pair of transparent conductive oxide films wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a first driver circuit electrically connected to the first thin film transistor;

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film adjacent to the second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with the second insulating film interposed therebetween,

wherein at least a channel region of the first oxide semiconductor film is substantially intrinsic, and

wherein each of the channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film has crystallinity and comprises an oxide semiconductor comprising zinc and indium.

114. The active matrix liquid crystal display device according to claim 113 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

115. The active matrix liquid crystal display device according to claim 113 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

116. A television device having the active matrix liquid crystal display device according to claim 113.

117. A computer having the active matrix liquid crystal display device according to claim 113.

118. The active matrix liquid crystal display device according to claim 113, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

119. The active matrix liquid crystal display device according to claim 113,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

120. The active matrix liquid crystal display device according to claim 113, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

121. The active matrix liquid crystal display device according to claim 113, wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

122. The active matrix liquid crystal display device according to claim 113, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

123. The active matrix liquid crystal display device according to claim 113, wherein each of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

124. The active matrix liquid crystal display device according to claim 113 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

125. The active matrix liquid crystal display device according to claim 124, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.

126. An active matrix liquid crystal display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film adjacent to the first gate electrode; and

a first oxide semiconductor film adjacent to the first gate electrode with the first insulating film interposed therebetween; and

a channel protective film over the first oxide semiconductor film, the channel protective film having a taper shape;

a pair of electrodes formed over the first oxide semiconductor film and the channel protective film, wherein one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film and the other one of the pair of electrodes is in contact with a side surface of the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor;

a scanning line driver circuit electrically connected to the first gate electrode;

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film adjacent to the second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with the second insulating film interposed therebetween,

wherein each of the pair of electrodes is in contact with the first oxide semiconductor film,

wherein at least a channel region of the first oxide semiconductor film is substantially intrinsic, and

wherein each of the channel region of the first oxide semiconductor film and a channel region of the second oxide semiconductor film comprises an oxide semiconductor comprising zinc and indium.

127. The active matrix liquid crystal display device according to claim 126 wherein each of the pair of electrodes comprises a titanium film over an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

128. A television device having the active matrix liquid crystal display device according to claim 126.

129. A computer having the active matrix liquid crystal display device according to claim 126.

130. The active matrix liquid crystal display device according to claim 126, wherein each of the pair of electrodes comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), platinum (Pt) and titanium (Ti), or a nitride of the metal.

131. The active matrix liquid crystal display device according to claim 126,

wherein the first insulating film is in contact with the first oxide semiconductor film, and

wherein the first insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide.

132. The active matrix liquid crystal display device according to claim 126, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

133. The active matrix liquid crystal display device according to claim 126, wherein the oxide semiconductor is an In—

Ga—

Zn—

O based oxide semiconductor.

134. The active matrix liquid crystal display device according to claim 126, wherein each of the channel region of the first oxide semiconductor film and the channel region of the second oxide semiconductor film has crystallinity.

135. The active matrix liquid crystal display device according to claim 126 wherein the first oxide semiconductor film has a thickness of 200 nm or less.

136. The active matrix liquid crystal display device according to claim 135, wherein the first oxide semiconductor film has a thickness of 25 to 200 nm.