GaN compound semiconductor light emitting element and method of manufacturing the same

• US 8,274,094 B2
• Filed: 02/17/2012
• Issued: 09/25/2012
• Est. Priority Date: 10/22/2004
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Postech Foundation, Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Lee, Jong Lam
• Primary Examiner(s): Nguyen, Thinh T
• Application Number:
  US13/399,474
• Publication Number:
  US 20120146081A1
• Time in Patent Office: 221 Days
• Field of Search: 257/94, 257/98, 257/99, 257/102, 257/103, 257/E33.06, 438/27, 438/29
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.

Claims

1. A light emitting element, comprising:

a substrate;

a nitride semiconductor structure arranged on the substrate, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;

a first electrode electrically connected to the first-type nitride semiconductor layer, the first electrode comprising a reflective metallic layer;

a second electrode arranged on the second-type nitride semiconductor layer; and

a patterned insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,

wherein a first portion of the patterned insulation layer is arranged directly below the second electrode.

2. The light emitting element of claim 1, wherein the patterned insulation layer contacts the first-type nitride semiconductor layer.

3. The light emitting element of claim 1, wherein the patterned insulation layer comprises a plurality of alternately laminated layers.

4. The light emitting element of claim 1, wherein the patterned insulation layer comprises a thickness of 100nm to 100μ

m.

5. The light emitting element of claim 1, wherein the patterned insulation layer comprises at least one of SiO₂, Si₃N₄, MgO, Al₂O₃, TiO₂, VO₂, ZrO₂, Ce₂O₃, HfO₂, NbO₂, Ta₂O₅, Y₂O₃, V₂O₃ and WO₃.

6. The light emitting element of claim 1, further comprising a second portion of the patterned insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,

wherein the first electrode is arranged between the first portion of the patterned insulation layer and the second portion of the patterned insulation layer.

7. The light emitting element of claim 1, wherein the first electrode further comprises a diffusion barrier layer arranged on the reflective metallic layer.

8. The light emitting element of claim 1, further comprising a protective layer arranged on a side of the nitride semiconductor structure.

9. The light emitting element of claim 1, further comprising an anti-reflective layer arranged on a top of the nitride semiconductor structure.

10. The light emitting element of claim 1, further comprising a reflective layer arranged between the first electrode and the substrate.

11. The light emitting element of claim 1, wherein the substrate comprises a multi-layered structure.

12. The light emitting element of claim 11, wherein the substrate comprises a first layer comprising Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, Cr, or any combination thereof, and a second layer comprising Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, Cr, or any combination thereof.

13. A light emitting element, comprising:

a substrate;

a nitride semiconductor structure arranged on the substrate, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;

a first electrode arranged between the substrate and the first-type nitride semiconductor layer;

a second electrode arranged on the second-type nitride semiconductor layer; and

an insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,

wherein the insulation layer comprises a plurality of patterned portions, and at least a first patterned portion is entirely arranged directly below the second electrode.

14. The light emitting element of claim 13, wherein the first electrode contacts the first-type nitride semiconductor layer.

15. The light emitting element of claim 13, wherein the first electrode comprises a plurality of portions alternately arranged between the plurality of patterned insulation layer portions.

16. The light emitting element of claim 15, wherein the first electrode comprises a reflective metallic layer.

17. The light emitting element of claim 16, wherein the reflective metallic layer comprises a mesh pattern.