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GaN compound semiconductor light emitting element and method of manufacturing the same

  • US 8,274,094 B2
  • Filed: 02/17/2012
  • Issued: 09/25/2012
  • Est. Priority Date: 10/22/2004
  • Status: Active Grant
First Claim
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1. A light emitting element, comprising:

  • a substrate;

    a nitride semiconductor structure arranged on the substrate, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;

    a first electrode electrically connected to the first-type nitride semiconductor layer, the first electrode comprising a reflective metallic layer;

    a second electrode arranged on the second-type nitride semiconductor layer; and

    a patterned insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,wherein a first portion of the patterned insulation layer is arranged directly below the second electrode.

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