Nitride semiconductor light emitting device and fabrication method thereof
First Claim
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1. A light emitting device comprising:
- a first nitride semiconductor layer;
an active layer on the first nitride semiconductor layer;
a second nitride semiconductor layer on the active layer; and
an electrode on the second nitride semiconductor layer;
wherein the active layer includes a quantum well structure for emitting light;
wherein the first nitride semiconductor layer includes a super lattice structure having at least two layers; and
wherein the second nitride semiconductor layer includes a p-type impurity, the p-type impurity having a doping profile comprising a plurality of peaks through the depth of the second nitride semiconductor layer,wherein the second nitride semiconductor layer comprises a periodic structure, and wherein a period of the periodic structure comprises a p-doped first GaN layer and a p-doped second GaN layer, wherein the p-doped second GaN layer includes a material selected from the group consisting of In and Al, andwherein each peak of the plurality of peaks occurs in a p-doped first GaN layer of the periodic structure.
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Abstract
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
12 Citations
21 Claims
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1. A light emitting device comprising:
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a first nitride semiconductor layer; an active layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the active layer; and an electrode on the second nitride semiconductor layer; wherein the active layer includes a quantum well structure for emitting light; wherein the first nitride semiconductor layer includes a super lattice structure having at least two layers; and wherein the second nitride semiconductor layer includes a p-type impurity, the p-type impurity having a doping profile comprising a plurality of peaks through the depth of the second nitride semiconductor layer, wherein the second nitride semiconductor layer comprises a periodic structure, and wherein a period of the periodic structure comprises a p-doped first GaN layer and a p-doped second GaN layer, wherein the p-doped second GaN layer includes a material selected from the group consisting of In and Al, and wherein each peak of the plurality of peaks occurs in a p-doped first GaN layer of the periodic structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting device comprising:
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a first nitride semiconductor layer; an active layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the active layer; and an electrode on the second nitride semiconductor layer; wherein the active layer includes a quantum well structure for emitting light; wherein the first nitride semiconductor layer includes a super lattice structure having at least two layers; and wherein the second nitride semiconductor layer includes a p-type impurity, the p-type impurity having a doping profile comprising a plurality of peaks through the depth of the second nitride semiconductor layer, wherein the second nitride semiconductor layer comprises a p-type GaN layer and a p-type AlGaN layer, wherein a p-type impurity of the p-type GaN layer is more heavily doped than a p-type impurity of the p-type AlGaN layer. - View Dependent Claims (12, 13)
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14. A light emitting device comprising:
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a first nitride semiconductor layer; an active layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the active layer; and an electrode on the second nitride semiconductor layer; wherein the active layer includes a quantum well structure for emitting light; wherein the first nitride semiconductor layer includes a super lattice structure having at least two layers; and wherein the second nitride semiconductor layer includes a p-type impurity, the p-type impurity having a doping profile comprising a plurality of peaks through the depth of the second nitride semiconductor layer, wherein the second nitride semiconductor layer comprises a periodic structure, and wherein a period of the periodic structure comprises a p-doped GaN layer, a p-doped AlGaN cap layer, and a p-doped InGaN layer. - View Dependent Claims (15)
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16. A method of forming a light emitting device, comprising:
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forming a first nitride semiconductor layer on a substrate, wherein the first nitride semiconductor layer includes a super lattice structure having at least two layers; forming an active layer on the first nitride semiconductor layer, wherein the active layer includes a quantum well structure for emitting light; forming a second nitride semiconductor layer on the active layer, wherein forming the second nitride semiconductor layer comprises doping the second nitride semiconductor layer with a p-type impurity using a delta doping process such that the p-type impurity has a doping profile having a plurality of peaks through the depth of the second nitride semiconductor layer; forming an electrode on the second nitride semiconductor layer; and performing an activation process whereby the p-type impurity diffuses through the second nitride semiconductor layer. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification