Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
First Claim
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1. A transistor comprising:
- a gate electrode;
a gate insulating layer provided over the gate electrode;
an oxide semiconductor layer provided over the gate insulating layer and overlapping with the gate electrode;
a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and
a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer.
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Abstract
To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.
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Citations
8 Claims
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1. A transistor comprising:
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a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer and overlapping with the gate electrode; a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer so as to overlap with the gate electrode; forming a silicon layer so as to cover the oxide semiconductor layer; etching the silicon layer to expose a part of the oxide semiconductor layer; forming a conductive film over the silicon layer and the oxide semiconductor layer; and etching the conductive film to form a source electrode layer and a drain electrode layer. - View Dependent Claims (7, 8)
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Specification