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Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device

  • US 8,278,657 B2
  • Filed: 02/04/2010
  • Issued: 10/02/2012
  • Est. Priority Date: 02/13/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode;

    a gate insulating layer provided over the gate electrode;

    an oxide semiconductor layer provided over the gate insulating layer and overlapping with the gate electrode;

    a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and

    a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer.

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