Semiconductor device and method for manufacturing the same

• US 8,278,660 B2
• Filed: 10/27/2011
• Issued: 10/02/2012
• Est. Priority Date: 12/04/1992
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Zhang, Hongyong, Uochi, Hideki, Takayama, Toru, Fukunaga, Takeshi, Takemura, Yasuhiko
• Primary Examiner(s): Kebede, Brook
• Application Number:
  US13/282,515
• Publication Number:
  US 20120068266A1
• Time in Patent Office: 341 Days
• Field of Search: 438149-167, 257/2, 257/4, 257/6, 257/27, 257/57, 257/72, 257/302, 257/328, 257/350, 257/372, 257/390, 257/E51.005, 257/E29.151
• US Class Current: 257/57
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

Claims

1. A semiconductor device comprising:

a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;

a first gate electrode and a second gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween; and

an electrode in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions,

wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.

2. The semiconductor device according to claim 1, wherein the substrate is a glass substrate.

3. The semiconductor device according to claim 1, wherein the semiconductor film includes nickel.

4. The semiconductor device according to claim 1, wherein the electrode is between the first gate electrode and the second gate electrode.

5. The semiconductor device according to claim 1, wherein the P-type impurity includes boron, and the N-type impurity includes phosphorus.

6. A semiconductor device comprising:

a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;

a first gate electrode and a second gate electrode over the semiconductor film with a gate insulating film interposed therebetween;

an interlayer insulator over the first gate electrode and the second gate electrode; and

an electrode over the interlayer insulator,

wherein the electrode is in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions, and

wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.

7. The semiconductor device according to claim 6, wherein the substrate is a glass substrate.

8. The semiconductor device according to claim 6, wherein the semiconductor film includes nickel.

9. The semiconductor device according to claim 6, wherein the electrode is between the first gate electrode and the second gate electrode.

10. The semiconductor device according to claim 6, wherein the P-type impurity includes boron, and the N-type impurity includes phosphorus.

11. A semiconductor device comprising:

a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;

a first gate electrode and a second gate electrode over the semiconductor film with a gate insulating film interposed therebetween;

an interlayer insulator over the first gate electrode and the second gate electrode; and

a first electrode, a second electrode, and a third electrode over the interlayer insulator,

wherein the first electrode is in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions,

wherein the second electrode is in direct contact with the other one of the pair of P-type impurity regions, and the third electrode is in direct contact with the other one of the pair of N-type impurity regions, and

wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.

12. The semiconductor device according to claim 11, wherein the substrate is a glass substrate.

13. The semiconductor device according to claim 11, wherein the semiconductor film includes nickel.

14. The semiconductor device according to claim 11, wherein the first electrode is between the first gate electrode and the second gate electrode.

15. The semiconductor device according to claim 11, wherein the P-type impurity includes boron, and the N-type impurity includes phosphorus.