×

Semiconductor device and method for manufacturing the same

  • US 8,278,660 B2
  • Filed: 10/27/2011
  • Issued: 10/02/2012
  • Est. Priority Date: 12/04/1992
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;

    a first gate electrode and a second gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween; and

    an electrode in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions,wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×