Semiconductor light-emitting device and fabrication method thereof
First Claim
1. A semiconductor light-emitting device, comprising:
- a semiconductor substrate having an upper surface with only one predetermined lattice direction perpendicular to the upper surface thereof, wherein the only one predetermined lattice direction is selected from a group consisting of oriented directions toward [0 11] with a first angle from [100], [01 1] with the first angle from [100], [011] with a second angle from [ 100], and [0 11] with the second angle from [ 100], wherein the first or the second angle is between 6° and
55°
; and
a multilayer epitaxial structure disposed on the upper surface, wherein the multilayer epitaxial structure has a roughened upper surface substantially perpendicular to the only one predetermined lattice direction,wherein the upper surfaces of the multilayer epitaxial structure and the semiconductor substrate have substantially the same surface topography.
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Abstract
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0
12 Citations
6 Claims
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1. A semiconductor light-emitting device, comprising:
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a semiconductor substrate having an upper surface with only one predetermined lattice direction perpendicular to the upper surface thereof, wherein the only one predetermined lattice direction is selected from a group consisting of oriented directions toward [0 1 1] with a first angle from [100], [011 ] with the first angle from [100], [011] with a second angle from [1 00], and [011 ] with the second angle from [1 00], wherein the first or the second angle is between 6° and
55°
; anda multilayer epitaxial structure disposed on the upper surface, wherein the multilayer epitaxial structure has a roughened upper surface substantially perpendicular to the only one predetermined lattice direction, wherein the upper surfaces of the multilayer epitaxial structure and the semiconductor substrate have substantially the same surface topography. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification