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Semiconductor light-emitting device and fabrication method thereof

  • US 8,278,672 B2
  • Filed: 03/26/2007
  • Issued: 10/02/2012
  • Est. Priority Date: 03/27/2006
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising:

  • a semiconductor substrate having an upper surface with only one predetermined lattice direction perpendicular to the upper surface thereof, wherein the only one predetermined lattice direction is selected from a group consisting of oriented directions toward [0 11] with a first angle from [100], [01 1] with the first angle from [100], [011] with a second angle from [ 100], and [0 11] with the second angle from [ 100], wherein the first or the second angle is between 6° and

    55°

    ; and

    a multilayer epitaxial structure disposed on the upper surface, wherein the multilayer epitaxial structure has a roughened upper surface substantially perpendicular to the only one predetermined lattice direction,wherein the upper surfaces of the multilayer epitaxial structure and the semiconductor substrate have substantially the same surface topography.

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