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Field effect transistor with gated and non-gated trenches

  • US 8,278,705 B2
  • Filed: 06/02/2011
  • Issued: 10/02/2012
  • Est. Priority Date: 06/10/2005
  • Status: Active Grant
First Claim
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1. A FET comprising:

  • a plurality of trenches extending into a semiconductor region of a first conductivity type, the plurality of trenches comprising a plurality of gated trenches and a plurality of non-gated trenches;

    a body region of a second conductivity in the semiconductor region between adjacent trenches;

    a dielectric material filling a bottom portion of each of the gated and non-gated trenches;

    a gate electrode in each gated trench; and

    a conductive material of the second conductivity type in each non-gated trench such that the conductive material contacts corresponding body regions along sidewalls of the non-gated trench.

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