Method of manufacturing photomask and method of repairing optical proximity correction
First Claim
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1. An integrated circuit, comprising:
- a plurality of patterned layers and a plurality of contact plugs, wherein at least one contact plug among the plurality of contact plugs has an elliptic shape in a top view, wherein the at least one contact plug having an elliptic shape in a top view is one or both of a pair of neighboring contact plugs.
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Abstract
A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.
43 Citations
17 Claims
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1. An integrated circuit, comprising:
a plurality of patterned layers and a plurality of contact plugs, wherein at least one contact plug among the plurality of contact plugs has an elliptic shape in a top view, wherein the at least one contact plug having an elliptic shape in a top view is one or both of a pair of neighboring contact plugs. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit, comprising a plurality of patterned layers and a plurality of contact plugs, wherein at least one contact plug among the plurality of contact plugs has a center shift relative to at least one of
a part of an upper patterned layer over and relating to the at least one contact plug, and a part of a lower patterned layer under and relating to the at least one contact plug, wherein the part of the upper patterned layer and the part of the lower patterned layer each correspond to the at least one contact plug in position, the at least one contact plug is located in a dielectric layer as a first patterned layer among the plurality of patterned layers, the plurality of patterned layers also includes a second patterned layer at the same level of the at least one contact plug, the lower patterned layer includes a plurality of active areas, the upper patterned layer includes a plurality of interconnect lines, and the second patterned layer includes a plurality of gates.
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13. An integrated circuit, comprising a plurality of patterned layers and a plurality of contact plugs, wherein at least one contact plug among the plurality of contact plugs has an elliptic shape and has a center shift relative to at least one of
a part of an upper patterned layer over and relating to the at least one contact plug, and a part of a lower patterned layer under and relating to the at least one contact plug, wherein the part of the upper patterned layer and the part of the lower patterned layer each correspond to the at least one contact plug in position.
Specification