Method for producing an optoelectronic component and optoelectronic component
First Claim
1. A method for producing an optoelectronic component, the method comprising:
- providing a silicon-based growth substrate having a first coefficient of thermal expansion;
applying a multilayered nitride-containing buffer layer sequence;
epitaxially depositing a layer sequence including an n-doped first partial layer and a p-doped second partial layer, the layer sequence having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation;
forming contacts in the epitaxially deposited layer sequence;
applying a first contact layer on a surface of the p-doped second partial layer;
in a partial region thereof, removing the epitaxially deposited layer sequence;
providing a contact pad to make contact with the first contact layer;
applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts, the second partial layer being arranged between the first partial layer and the carrier substrate;
removing the growth substrate;
structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and
making contact with the epitaxially deposited layer sequence.
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Accused Products
Abstract
In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
43 Citations
14 Claims
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1. A method for producing an optoelectronic component, the method comprising:
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providing a silicon-based growth substrate having a first coefficient of thermal expansion; applying a multilayered nitride-containing buffer layer sequence; epitaxially depositing a layer sequence including an n-doped first partial layer and a p-doped second partial layer, the layer sequence having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation; forming contacts in the epitaxially deposited layer sequence; applying a first contact layer on a surface of the p-doped second partial layer; in a partial region thereof, removing the epitaxially deposited layer sequence; providing a contact pad to make contact with the first contact layer; applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts, the second partial layer being arranged between the first partial layer and the carrier substrate; removing the growth substrate; structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and making contact with the epitaxially deposited layer sequence. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for producing an optoelectronic component, the method comprising:
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providing a silicon-based growth substrate having a first coefficient of thermal expansion; applying a multilayered nitride-containing buffer layer sequence; epitaxially depositing a layer sequence, the layer sequence including an n-doped first partial layer and a p-doped second partial layer, the layer sequence having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation; forming a hole having an opening on a side of the epitaxial layer sequence that is remote from the buffer layer sequence; providing an insulation layer on a sidewall of the hole; filling the hole with a conductive material, thereby providing electrical contact with the first partial layer at a bottom region of the hole; forming contacts in the epitaxially deposited layer sequence; applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts, said second partial layer being arranged between said first partial layer and said carrier substrate; providing first and second through-holes through the carrier substrate; filling the first and second through-holes with an electrically conductive material, thereby providing contact with the first contact layer using the first through-hole and contact with the conductive material that fills the hole formed through the epitaxial layer sequence using the second through-hole; removing the growth substrate; structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and making contact with the epitaxially deposited layer sequence.
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Specification