Liquid crystal display device and method for manufacturing the same
First Claim
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1. A method for manufacturing a display device, comprising the steps of:
- forming a gate electrode by a droplet discharge method;
forming a first insulating film over the gate electrode;
forming a semiconductor film over the first insulating film;
forming a mask over the semiconductor film;
patterning the semiconductor film using the mask to form a patterned semiconductor film;
forming a thin film transistor using the patterned semiconductor film by forming source and drain electrodes by a droplet discharge method;
forming a columnar organic film over one of the source and the drain electrodes;
forming a second insulating film covering the columnar organic film and the thin film transistor;
removing the columnar organic film; and
forming a pixel electrode connecting the one of source and drain electrodes over the second insulating film.
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Abstract
As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.
31 Citations
12 Claims
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1. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode by a droplet discharge method; forming a first insulating film over the gate electrode; forming a semiconductor film over the first insulating film; forming a mask over the semiconductor film; patterning the semiconductor film using the mask to form a patterned semiconductor film; forming a thin film transistor using the patterned semiconductor film by forming source and drain electrodes by a droplet discharge method; forming a columnar organic film over one of the source and the drain electrodes; forming a second insulating film covering the columnar organic film and the thin film transistor; removing the columnar organic film; and forming a pixel electrode connecting the one of source and drain electrodes over the second insulating film. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode by a droplet discharge method; forming a first insulating film over the gate electrode; forming a semiconductor film over the first insulating film; forming source and drain electrodes by a droplet discharge method, over the semiconductor film; forming a columnar organic film over one of the source and the drain electrodes; forming a second insulating film covering the columnar organic film, the source and the drain electrodes, and the semiconductor film; removing the columnar organic film; and forming a pixel electrode connecting the source or drain electrode over the second insulating film. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode by a droplet discharge method; forming a first insulating film over the gate electrode; forming a semiconductor film over the first insulating film; forming a mask over the second insulating film; patterning the semiconductor film using the mask to form a patterned semiconductor film; forming source and drain electrodes by a droplet discharge method, the source and drain electrode being over the patterned semiconductor film; forming a columnar organic film over one of the source and the drain electrodes; forming a second insulating film covering the columnar organic film, the patterned semiconductor film, and the source and drain electrodes; removing the columnar organic film; and forming a pixel electrode connecting the one of source and drain electrodes over the second insulating film. - View Dependent Claims (10, 11, 12)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Maekawa, Shinji, Fujii, Gen, Kuwabara, Hideaki
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Primary Examiner(s)Tran, Tony
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Application NumberUS13/101,766Publication NumberTime in Patent Office523 DaysField of Search438/149, 438/34, 438/151, 257/E21.411US Class Current438/149CPC Class CodesG02F 1/13415 Drop filling processG02F 1/13458 Terminal padsG02F 1/136227 Through-hole connection of ...G02F 1/136286 Wiring, e.g. gate line, dra...G02F 1/136295 Materials; Compositions; Ma...H01L 27/1292 using liquid deposition, e....
