Manufacturing process for solid state lighting device on a conductive substrate

• US 8,283,676 B2
• Filed: 05/18/2010
• Issued: 10/09/2012
• Est. Priority Date: 01/21/2010
• Status: Expired due to Fees

• Current Assignee: Siphoton Incorporated
• Original Assignee: Siphoton Incorporated
• Inventors: Pan, Shaoher X., Chen, Jay
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US12/782,080
• Publication Number:
  US 20110177636A1
• Time in Patent Office: 875 Days
• Field of Search: 257 13- 14, 257 94- 95, 257/103, 257/E33.003, 257/E33.005, 257/E33.006, 257/E33.007, 257/E33.008, 257/E33.023, 257/E33.025, 257/E21.159, 257/E21.499, 438 26- 29
• US Class Current: 257/79
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Claims

1. A method of fabricating a light emitting device, comprising:

forming a trench in a first surface on a first side of a substrate, wherein the trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate;

forming light emission layers over the first trench surface, wherein the light emission layer is configured to emit light;

removing at least a portion of the substrate from the second side of the substrate to expose at least one of the light emission layers forming a transparent conductive layer and over the exposed at least one of the light emission layers.

2. The method of claim 1, wherein the light emission layers are configured to emit light in response to an electric current flowing across the base electrode layer and the transparent conductive layer.

3. A method for fabricating a light emitting device, comprising:

forming light emission layers having monolithic crystal structures on a silicon substrate, wherein the light emission layers are configured to emit light when an electric current flows across the light emission layers, wherein the silicon substrate is on a first side of the light emission layers;

forming a reflective layer on the second side of the light emission layers, the second side being opposite to the first side;

forming a base electrode layer on the reflective layer, wherein the base electrode layer comprises a conductive material;

removing at least a portion of silicon substrate on the first side of the light emission layers to expose at least one of the light emission layers; and

forming a transparent conductive layer over the exposed at least one of the light emission layers.

4. A method for making a light emission module, comprising:

constructing one or more light emitting structures on a conductive substrate, wherein each of the one or more light emitting structures comprises light emission layers and a transparent conductive layer on the light emission layers, wherein the light emission layers are formed on one or more protrusions on the conductive substrate, wherein the one or more light emitting structures further comprise an electrode layer around the protrusion, the electrode layer in electric connection with the transparent conductive layer, wherein the electric interconnect is configured to electrically connect the electrode layer to the second electrode;

attaching the one or more light emitting structures to amounting substrate by an electric interconnect, the mounting substrate having a first electrode and a second electrode;

allowing the first electrode to be in electrical connection with the conductive substrate; and

allowing the second electrode to be in electric connection with the transparent conductive layer, wherein the light emission layers in each of one or more light emitting structures are configured to emit light when an electric current flows across the first electrode and the second electrode.

5. The method of claim 4, wherein the electric interconnect includes a window to allow light emitted from the light emission layers to pass through when the one or more light emitting structures is clamped to the mounting substrate by the electric interconnect.