Light emitting device and light emitting device package having the same

• US 8,283,692 B2
• Filed: 05/20/2010
• Issued: 10/09/2012
• Est. Priority Date: 05/21/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choo, Sung Ho, Choi, Byeong Kyun, Lim, Woo Sik
• Primary Examiner(s): Zarneke, David
• Application Number:
  US12/783,638
• Publication Number:
  US 20110012152A1
• Time in Patent Office: 873 Days
• Field of Search: 257/99, 257/E33.066
• US Class Current: 257/99
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.

Claims

1. A light emitting device comprising:

a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

a first electrode including at least one arm shape, the first electrode to contact a portion of the first conductive type semiconductor layer;

an insulating layer covering the first electrode; and

a second electrode including at least one arm shape, the second electrode to electrically connect to the second conductive type semiconductor layer,

wherein the second electrode is provided on the insulating layer and the second conductive type semiconductor layer.

2. The light emitting device of claim 1, further comprising a first electrode layer on the second electrode.

3. The light emitting device of claim 2, wherein the first electrode layer physically contacts the insulating layer and the second conductive type semiconductor layer.

4. The light emitting device of claim 1, wherein a portion of the second electrode overlaps the first electrode disposed under the insulating layer.

5. The light emitting device of claim 1, further comprising at least one second pad connected to the second electrode and being disposed on the second conductive type semiconductor layer.

6. The light emitting device of claim 2, wherein a portion of the first electrode layer is disposed between the second electrode and the second pad.

7. The light emitting device of claim 6, wherein the second pad directly contacts the second electrode, the first electrode layer, and the second conductive type semiconductor layer.

8. The light emitting device of claim 2, wherein the insulating layer includes an opening to expose a portion of the first electrode.

9. The light emitting device of claim 8, further comprising a first pad on the first electrode exposed by the opening.

10. The light emitting device of claim 8, wherein the opening is disposed in the insulating layer and the first electrode layer.

11. The light emitting device of claim 2, further comprising a second electrode layer between the second electrode and the second conductive type semiconductor layer.

12. The light emitting device of claim 11, wherein the first electrode layer includes a transmittive electrode layer and/or a reflective electrode layer.

13. The light emitting device of claim 11, wherein the first electrode layer and the second electrode layer include a transmittive electrode layer.

14. The light emitting device of claim 1, wherein at least one of the first electrode and the second electrode includes at least one of a straight-line pattern, a curved pattern, a mixture pattern of the straight-line pattern and the curved pattern, plural patterns branching from one pattern, a polygonal shape pattern, a lattice shape pattern, a dot shape pattern, a diamond shape pattern, a parallelogram shape pattern, a mesh shape pattern, a stripe shape pattern, a cross shape pattern, a star-shape pattern, a circular shape pattern, and a mixture pattern thereof.

15. The light emitting device of claim 2, further comprising a semiconductor layer interposed between the second conductive type semiconductor layer and the second electrode layer and having a polarity opposite to a polarity of a second conductive type.

16. The light emitting device of claim 1, further comprising at least one of an undoped semiconductor layer, a buffer layer, and a substrate below the first conductive type semiconductor layer.

17. The light emitting device of claim 1, wherein the first electrode and the second electrode vertically overlap each other by at least 60%.

18. A light emitting device comprising:

a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

a first electrode including at least one arm shape, the first electrode being embedded in the light emitting structure and the first electrode contacts a portion of the first conductive type semiconductor layer;

an insulating layer covering the first electrode;

a second electrode including at least one arm shape, the second electrode being disposed on at least one of the insulating layer and the second conductive type semiconductor layer; and

a first transmittive electrode layer on the second electrode and the insulating layer.

19. The light emitting device of claim 18, further comprising a second transmittive electrode layer interposed between the second electrode and the second conductive type semiconductor layer, and the second transmittive electrode layer being vertically overlapped with the first transmittive electrode layer.

20. The light emitting device of claim 18, further comprising an opening formed in the insulating layer and the first transmittive electrode layer and exposing the first electrode.

21. The light emitting device of claim 19, wherein the first transmittive electrode layer is formed more widely than an area of the second transmittive electrode layer.

22. The light emitting device of claim 19, wherein the second electrode vertically overlaps the first electrode on the first transmittive electrode layer.

23. The light emitting device of claim 22, wherein the first transmittive electrode vertically overlaps the insulating layer on the second electrode.

24. The light emitting device of claim 22, wherein the first transmittive electrode layer vertically overlaps the first electrode on the insulating layer.

25. The light emitting device of claim 18, wherein at least one of the first electrode and the second electrode includes at least one a straight-line pattern, a curved pattern, a mixture pattern of the straight-line pattern and the curved pattern, plural patterns branching from one pattern, a polygonal shape pattern, a lattice shape pattern, a dot shape pattern, a diamond shape pattern, a parallelogram shape pattern, a mesh shape pattern, a stripe shape pattern, a cross shape pattern, a star-shape pattern, a circular shape pattern, and a mixture pattern thereof.

27. The light emitting device of claim 18, wherein the first conductive type semiconductor layer is an n-type semiconductor layer and the second conductive type semiconductor layer is a p-type semiconductor layer having a thickness thinner than that of the n-type semiconductor layer.

26. A light emitting device package comprising:

a body;

a plurality of lead electrodes on the body;

a light emitting device electrically connected to the lead electrodes; and

a molding member covering the light emitting device,

wherein the light emitting device includes;

a light emitting structure, that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer,

a first electrode including at least one arm shape, the first electrode to contact a portion of the first conductive type semiconductor layer,

an insulating layer covering the first electrode, and

a second electrode including at least one arm shape, wherein the second electrode is disposed on at least one of the insulating layer and the second conductive type semiconductor layer.