Memory element and semiconductor device, and method for manufacturing the same
First Claim
1. A memory element comprising:
- a first conductive layer over and in contact with a first region of an insulating film;
a second conductive layer over and in contact with a second region of the insulating film; and
a conductive particle deposited between the first conductive layer and the second conductive layer, the conductive particle having a surface covered with an organic film,wherein the first region is apart from the second region, andwherein the first and second conductive layers are electrically connectable to each other at least through the conductive particle as a result in a writing operation of the memory element.
2 Assignments
0 Petitions
Accused Products
Abstract
It is an object to solve inhibition of miniaturization of an element and complexity of a manufacturing process thereof. It is another object to provide a nonvolatile memory device and a semiconductor device having the memory device, in which data can be additionally written at a time besides the manufacturing time and in which forgery caused by rewriting of data can be prevented. It is further another object to provide an inexpensive nonvolatile memory device and semiconductor device. A memory element is manufactured in which a first conductive layer, a second conductive layer that is beside the first conductive layer, and conductive fine particles of each surface which is covered with an organic film are deposited over an insulating film. The conductive fine particles are deposited between the first conductive layer and the second conductive layer.
74 Citations
16 Claims
-
1. A memory element comprising:
-
a first conductive layer over and in contact with a first region of an insulating film; a second conductive layer over and in contact with a second region of the insulating film; and a conductive particle deposited between the first conductive layer and the second conductive layer, the conductive particle having a surface covered with an organic film, wherein the first region is apart from the second region, and wherein the first and second conductive layers are electrically connectable to each other at least through the conductive particle as a result in a writing operation of the memory element. - View Dependent Claims (2)
-
-
3. A semiconductor device including a plurality of memory elements each of which comprises:
-
a first conductive layer and a second conductive layer that is beside the first conductive layer with an interval “
d”
;a first conductive fine particle that overlaps the first conductive layer, a second conductive fine particle interposed between the first conductive layer and the second conductive layer; and a third conductive fine particle that overlaps the second conductive layer, wherein the first conductive layer is over and in contact with an insulating film, wherein the second conductive layer is over and in contact with the insulating film, and wherein the first and second conductive layers are electrically connectable or electrically connected to each other at least through the second conductive fine particle as a result in applying voltage between the first conductive layer and the second conductive layer. - View Dependent Claims (4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device including a memory element which comprises:
-
a first conductive layer and a second conductive layer that is beside the first conductive layer with an interval “
d”
;a layer including; a first conductive fine particle that overlaps the first conductive layer; a second conductive fine particle that overlaps a region between the first conductive layer and the second conductive layer; and a third conductive fine particle that overlaps the second conductive layer, wherein the first conductive layer is over and in contact with an insulating film, wherein the second conductive layer is over and in contact with the insulating film, wherein the layer is in contact with a portion of the insulating film between the first conductive layer and the second conductive layer, and wherein the first and second conductive layers are electrically connectable or electrically connected to each other at least through the second conductive fine particle. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
Specification