Semiconductor device including sensor member and cap member and method of making the same

• US 8,283,738 B2
• Filed: 01/07/2010
• Issued: 10/09/2012
• Est. Priority Date: 01/09/2009
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo, Inoue, Masaki
• Primary Examiner(s): Kraig, William F
• Application Number:
  US12/654,902
• Publication Number:
  US 20100176466A1
• Time in Patent Office: 1,006 Days
• Field of Search: 257/415, 257/417, 257/418, 257/419, 257/E29.324, 257/414, 438/106, 438/411, 438/421, 438/458
• US Class Current: 257/415
• CPC Class Codes: B81B 2207/092 Buried interconnects in the substrate or in the lid
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/148 Charge coupled imagers individual charge coupled devices H01L29/765

Abstract

A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

Claims

1. A semiconductor device comprising:

a sensor member having a surface and including a first sensing section, the first sensing section including first and second portions located on the surface side of the sensor member and electrically insulated from each other; and

a cap member having a first surface joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member, the cap member including a cross wiring portion for electrically connecting the first portion to the second portion, wherein

the cap member has a second surface opposite to the first surface,

the cross wiring portion includes a cross wire, a first through electrode, and a second through electrode,

the cross wire is located on the second surface of the cap member and extends parallel to the second surface of the cap member,

the first through electrode extends from the first surface to the second surface of the cap member and has a first end electrically connected to the cross wire and a second end electrically connected to the first portion,

the second through electrode extends from the first surface to the second surface of the cap member and has a first end electrically connected to the cross wire and a second end electrically connected to the second portion, and

the cap member further has a bonding pad located on the second surface of the cap member and electrically connected to the cross wire.

2. The semiconductor device according to claim 1, wherein

the cross wiring portion includes a second cross wire extending parallel to the first surface of the cap member.

3. The semiconductor device according to claim 1, wherein

the cap member includes a substrate having a second sensing section, the cap member further including a partition substrate having first and second surfaces opposite to each other,

the first surface of the partition substrate defines the first surface of the cap member and is joined to the surface of the sensor member to form a first sealed space between the sensor member and the cap member,

the first sensing section is located in the first sealed space,

the second surface of the partition substrate is joined to the substrate to form a second sealed space between the substrate and the partition substrate, and

the second sensing section is located to correspond to the second sealed space.

4. The semiconductor device according to claim 3,

wherein the first sealed space and the second sealed space are under different pressures.

5. The semiconductor device according to claim 3,

wherein the first sealed space and the second sealed space are filled with different gases.

6. The semiconductor device according to claim 1, wherein

the cap member further includes a silicon substrate, and

the first through electrode and the second through electrode penetrate the silicon substrate.

7. The semiconductor device according to claim 1, wherein

the cap member further includes a passivation layer on the second surface side,

the cross wire is covered with the passivation layer, and

the bonding pad is exposed through the passivation layer.

8. A method of making a semiconductor device comprising:

preparing a sensor member having a surface and including a first sensing section, the first sensing section having a first portion located on the surface side of the sensor member and a second portion electrically insulated from the first portion;

preparing a cap member having a first surface and a second surface opposite to the first surface;

joining the surface of the sensor member to the first surface of the cap member in such a manner that the first sensing section is sealed by the sensor member and the cap member;

forming a cross wiring portion for electrically connecting the first portion to the second portion; and

forming a bonding pad on the second surface of the cap member, wherein

the forming of the cross wiring portion includes forming a first through electrode, forming a second through electrode, and forming a cross wire,

the first through electrode penetrates the cap member from the first surface to the second surface and has a first end electrically connected to the first portion,

the second through electrode penetrates the cap member from the first surface to the second surface and has a first end electrically connected to the second portion,

the cross wire is located on the second surface and electrically connects a second end of the first through electrode to a second end of the second through electrode, and

the bonding pad is electrically connected to the cross wire.

9. The method according to claim 8, wherein

the preparing of the cap member includes preparing a substrate having a second sensing section and preparing a partition substrate having first and second surfaces opposite to each other,

the joining of the surface of the sensor member includes joining the surface of the sensor member to the first surface of the partition substrate to form a first sealed space between the sensor member and the cap member and placing the first sensing section in the first-sealed space, and

the preparing of the cap member further includes joining the substrate to the second surface of the partition substrate to form a second sealed space between the substrate and the partition substrate and placing the second sensing section at a location corresponding to the second sealed space.

10. The method according to claim 9, wherein

the joining of the surface of the sensor member further includes maintaining the first sealed space at a first pressure, and

the preparing of the cap member further includes maintaining the second sealed space at a second pressure different from the first pressure.

11. The method according to claim 9, wherein

the joining of the surface of the sensor member further includes filling the first sealed space with a first gas, and

the preparing of the cap member further includes filling the second sealed space with a second gas different from the first gas.

12. The method according to claim 8, wherein

the cap member includes a silicon substrate.

13. The method according to claim 8, further comprising:

forming a passivation layer on the second surface side of the cap member in such a manner that the cross wire is covered with the passivation layer and that the bonding pad is exposed through the passivation layer.

14. The method according to claim 8, wherein

the first sensing section is configured to sense either acceleration or angular velocity.

15. The method according to claim 8, wherein

the sensor member is a capacitive acceleration sensor.

16. The method according to claim 8, wherein

in the joining of the surface of the sensor member to the first surface of the cap member, the surface of the sensor member is joined directly to the first surface of the cap member.